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| DC COMPONENTS CO., LTD. R 2SA950 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -30 -5 -800 600 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain (1) (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -35 -30 -5 45 100 40 2% Typ -0.28 120 19 Max -0.1 -0.1 -0.7 -1.3 320 - Unit V V V A A V V MHz pF Test Conditions IC=-100A, IE=0 IC=-2mA, IB=0 IE=-100A, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-500mA, IB=-20mA IC=-500mA, IB=-20mA IC=-5mA, VCE=-1V IC=-100mA, VCE=-1V IC=-500mA, VCE=-1V IC=-10mA, VCE=-5V VCE=-10V, f=1MHz, IE=0 VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380s, Duty Cycle Classification of hFE2 Rank Range O 100~200 Y 160~320 |
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