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RJK4013DPE
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1513-0200 Rev.2.00 Jul 02, 2009
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 400 30 17 51 17 51 6 2 100 1.25 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Page 1 of 6
RJK4013DPE
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 400 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.25 1450 175 21 33 28 84 15 38 8 17 0.9 260 Max -- 1 0.1 4.5 0.30 -- -- -- -- -- -- -- -- -- -- 1.5 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 400 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 8.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 8.5 A VGS = 10 V RL = 23.5 Rg = 10 VDD = 320 V VGS = 10 V ID = 17 A IF = 17 A, VGS = 0 Note4 IF = 17 A, VGS = 0 diF/dt = 100 A/s
REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Page 2 of 6
RJK4013DPE
Main Characteristics
Maximum Safe Operation Area
100
Typical Output Characteristics
20 Ta = 25C 10 V Pulse Test
PW
10
=
s
7V
6V
Drain Current ID (A)
0
s
Drain Current ID (A)
10
10
16
1 Operation in this area is limited by RDS(on)
12
5.75 V
0.1
8
5.5 V 5.25 V VGS = 5 V
0.01 Tc = 25C 1 shot 0.001 0.1 1
4
10
100
1000
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Typical Transfer Characteristics
Drain to Source on State Resistance RDS(on) ()
100 VDS = 10 V Pulse Test
10 VGS = 10 V Ta = 25C Pulse Test
Drain Current ID (A)
10
1
Tc = 75C
25C
1
0.1
-25C
0.01 0 2 4 6 8 10
0.1 1 10 100
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical)
VGS = 10 V Pulse Test 0.6 ID = 8.5 A 0.4 4.3 A 0.2
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Body-Drain Diode Reverse Recovery Time (Typical)
Reverse Recovery Time trr (ns)
0.8
1000
100
di / dt = 100 A / s VGS = 0, Ta = 25C 10 1 10 100
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Reverse Drain Current IDR (A)
REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Page 3 of 6
RJK4013DPE
Typical Capacitance vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10000 Ciss 1000
Dynamic Input Characteristics (Typical)
ID = 17 A Ta = 25 C VDD = 100 V 200 V 400 360 V VDS 8 VGS 12
600
100
Coss
10 VGS = 0 f = 1 MHz Ta = 25C 100
Crss
200
VDD = 360 V 200 V 100 V 8 16 24 32
4
1 0
0 40
200
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
50
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
Reverse Drain Current IDR (A)
VGS = 0 V Ta = 25 C 40 Pulse Test
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5 VDS = 10 V
4 ID = 10 mA 1 mA 0.1 mA 2 1
30
3
20 10
0
0.4
0.8
1.2
1.6
2.0
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (C)
REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Page 4 of 6
Gate to Source Voltage VGS (V)
800
16
Capacitance C (pF)
RJK4013DPE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
3 Tc = 25C 1 D=1 0.5 0.3
0.2
s (t)
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/ W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 pu ot h 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 200 V Vout Monitor Vin Vout 10% 10%
Waveform
90%
10%
90% td(on)
90% td(off) tf
tr
REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Page 5 of 6
RJK4013DPE
Package Dimensions
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Ordering Information
Part No. RJK4013DPE-00-J3 Quantity 1000 pcs Taping Shipping Container
REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Page 6 of 6
1.7
1.3 0.15
7.8 6.6
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