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| MCR100-6 Sensitive Gate Silicon Controlled Rectifiers Features Sensitive gate trigger current: IGT=200uA maximum Low on-state voltage: VTM =1.2(typ.)@ ITM Low reverse and forward blocking current: IDRM /IPRM=100uA@TC=125 Low holding current: IH=5mA maximum General Description Sensitive triggering SCR is suitable for the application where gate current limited such as microcontrollers, logic integrated circuits, small motor control, gate driver for large SCR, sensing and detecting circuits. General purpose switching and phase control applications Absolute Maximum Ratings (Tj=25 unless otherwise specified) Symbol VDRM /VRRM IT(RMS) IT(AV) ITSM I2t PGM dI/dt ITM = 2A; IG = 10mA; dIG/dt = 100mA/s PG(AV) IFGM VRGM TJ, Tstg Average gate power dissipation Peak gate current Peak gate voltage Junction temperature Storage temperature Parameter Repetitive peak off-state voltage RMS on-state current (180o conduction angles) Average on-state current (80o conduction angles ) Non repetitive surge peak on-state current tp = 10 ms It Value for fusing Peak gate power Critical rate of rise of on-state current TJ=125 TJ=125 TJ=125 TJ=125 tp = 8.3 ms Note(1) TI=85 TI=85 tp = 8.3 ms Value 400 0.8 0.5 9 Units V A A A 8 0.41 2 50 0.1 1 5 -40~125 -40~150 A 2s W A/s W A V Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.The rate of rise of current should not exceed 15 A/s. Thermal Characteristics Symbol RQJC RQJA Parameter Thermal resistance, Junction-to-Case Thermal resistance, Junction-to-Ambient Min - Value Typ - Max 60 150 Units /W /W Rev. B1 Jun.2009 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. T01-3 MCR100-6 Electrical Characteristics (TJ = 25C, RGK = 1 k unless otherwise specified) Symbol IDRM/IRRM off-state leakage current (VAK= VDRM /VRRM ) Forward "On" voltage (ITM = 1A tp = 380s) Gate trigger current (continuous dc) IGT VGT VGD (VAK = 7 Vdc, RL = 100 ) Gate Trigger Voltage (Continuous dc) (VAK = 7 Vdc, RL = 100 ) Gate threshold Voltage Voltage Rate of Rise Off-State Voltage dv/dt (VD=0.67VDRM ;exponential waveform) IH IL Rd Holding Current (VD = 12 V; IGT = 0.5 mA) latching current (VD = 12 V; IGT = 0.5 mA) Dynamic resistance TJ=125 Gate open circuit 25 2 2 5 6 245 mA mA m (Note2.1) TJ=125 (Note2.2) 0.2 500 800 0.8 V/s V V Characteristics Tc=25 Tc=125 (Note2.1) (Note2.2) Min - Typ. - Max 1 Unit A 100 15 1.2 1.7 200 V A VTM Note 2.1 Pulse width1.0ms,duty cycle1% 2.2 RGK current is not included in measurement. 2/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. MCR100-6 3/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. MCR100-6 4/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. MCR100-6 TO-92 Package Dimension Unit: mm 5/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. |
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