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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS
VDSS ID25
RDS(on) trr
= =
900V 18A 600m 300ns
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 TO-268 PLUS220 types Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 900 900 30 40 18 36 9 800 15 540 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14.6 6 4 4 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. N/lb. g g g G = Gate S = Source Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 900 3.0 6.0 100 V V nA High Power Density Easy to Mount Space Savings Applications Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
DS100057A(9/09) G S G D S G S D (TAB)
PLUS220 (IXFV)
D (TAB)
PLUS220SMD (IXFV_S)
D (TAB)
D = Drain TAB = Drain
25 A 1.5 mA 600 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247, PLUS220) 0.25 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Gate Input Resistance Characteristic Values Min. Typ. Max. 6 10 1.2 5230 366 53 40 33 60 44 97 30 40 S pF pF pF ns ns ns ns nC nC nC 0.23 C/W C/W
Source-Drain Diode TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 9A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.0 10.8 Characteristic Values Min. Typ. Max. 18 72 1.5 A A V
300 ns C A
Note 1. Pulse test, t 300s; duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS
Fig. 1. Output Characteristics
18 16 14 12
Fig. 2. Extended Output Characteristics
40 36 32 28
@ T J = 25C
VGS = 10V 9V 8V
@ T J = 25C
VGS = 10V 9V
ID - Amperes
ID - Amperes
10 8 6 4 2 0 0 1 2 3 4 5 6 7
7V
24 20 16 12
8V
7V
6V 8 6V 5V 8 9 10 4 5V 0 0 3 6 9 12 15 18 21 24 27 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 5V 0.6 0.2 -50 6V 7V
@ T J = 125C
VGS = 10V 9V 8V
Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature
3.0 2.6 VGS = 10V
R DS(on) - Normalized
2.2 1.8
ID - Amperes
I D = 18A I D = 9A
1.4 1.0
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current
3.0 VGS = 10V 2.6 TJ = 125C 20 18 16 14 2.2
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
ID - Amperes
TJ = 25C 0 4 8 12 16 20 24 28 32 36
12 10 8 6 4 2
1.8
1.4
1.0
0.6
0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS
Fig. 7. Input Admittance
32 28 24 18 16 14 25C TJ = 125C 25C - 40C TJ = - 40C
Fig. 8. Transconductance
ID - Amperes
20 16 12 8 4 0 3.5 4.0 4.5 5.0 5.5
g f s - Siemens
12 10 8 6 4 2 0 125C
6.0
6.5
7.0
7.5
8.0
8.5
0
4
8
12
16
20
24
28
32
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
60 10 9 50 8 7 VDS = 450V I D = 9A I G = 10mA
Fig. 10. Gate Charge
40
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
6 5 4 3 2 1
30
20
10
0
0 0 10 20 30 40 50 60 70 80 90 100
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 1.00
Fig. 12. Maximum Transient Thermal Impedance
Ciss
Capacitance - PicoFarads
Z(th)JC - C / W
1,000
0.10
Coss 100
Crss
f = 1 MHz
10 0 5 10 15 20 25 30 35 40 0.01 0.0001 0.001 0.01 0.1 1 10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS
TO-247 (IXFH) Outline PLUS220 (IXFV) Outline
E E1 L2 A A1 E1
D1 D
P
1 2 3
L3 L1
L
3X b 2X e
c A2
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Terminals: 1-Gate 2-Drain
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
A A1 A2 b c D D1 E E1 e L L1 L2 L3
PLUS220SMD (IXFV_S) Outline
TO-268 (IXFT) Outline
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_18N90P(76)9-11-09-A

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