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IDP30E120
Fast Switching Diode
Features * 1200 V diode technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 * Qualified according to JEDEC for target applications Type IDP30E120 Package PG-TO220-2 Ordering Code -
Product Summary VRRM IF VF T jmax 1200 30 1.65 150 PG-TO220-2 V A V C
Marking D30E120
Pin 1 C
PIN 2 A
PIN 3 -
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 1200 50 30
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
102 76.5 W 138 66
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg TS
-55...+150 260
C C
Rev.2.3
Page 1
2009-08-19
IDP30E120
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 0.9 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=1200V, T j=25C V R=1200V, T j=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.65 1.7 100 2500 V 2.15 -
Forward voltage drop
IF=30A, T j=25C IF=30A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2.3
Page 2
2009-08-19
IDP30E120
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=800V, IF=30A, diF/dt=850A/s, Tj =25C V R=800V, IF=30A, diF/dt=850A/s, Tj =125C V R=800V, IF=30A, diF/dt=850A/s, Tj =150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 243 355 380 23.7 28.3 29.5 2630 4700 5200 6 7.4 7.5 A nC -
Peak reverse current
V R=800V, IF = 30 A, di F/dt=850A/s, T j=25C V R=800V, IF =30A, diF/dt=850A/s, Tj=125C V R=800V, IF =30A, diF/dt=850A/s, Tj=150C
Reverse recovery charge
V R=800V, IF=30A, diF/dt=850A/s, Tj =25C V R=800V, IF =30A, diF/dt=850A/s, Tj=125C V R=800V, IF =30A, diF/dt=850A/s, Tj=150C
Reverse recovery softness factor
V R=800V, IF=30A, diF/dt=850A/s, Tj =25C V R=800V, IF=30A, diF/dt=850A/s, Tj =125C V R=800V, IF=30A, diF/dt=850A/s, Tj =150C
Rev.2.3
Page 3
2009-08-19
IDP30E120
1 Power dissipation Ptot = f (TC) parameter: Tj 150C
W
140
2 Diode forward current IF = f(TC) parameter: Tj 150C
55
A
45 40
120 110 100
P tot
80 70 60 50 40 30 20 10 0 25 50 75 100
IF
150
90
35 30 25 20 15 10 5
C TC
0 25
50
75
100
C TC
150
3 Typ. diode forward current IF = f (VF)
90
4 Typ. diode forward voltage VF = f (Tj)
2.4
60A
A V
70 60
-55C 25C 100C 150C
50 1.8 40 30 20 1.4 10 0 0 1.2 -60 1.6
15A 30A
0.5
1
1.5
2
V VF
3
VF
2
IF
-20
20
60
100
160 C Tj
Rev.2.3
Page 4
2009-08-19
IDP30E120
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 800V, T j = 125C
1100
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 C
6500
ns
900 800
nC
60A
5500
60A 30A 15A
Q rr
5000
30A
trr
700
4500 600 4000 500 400 300 200 200 3500
15A
3000
300
400
500
600
700
800
A/s 1000 di F/dt
2500 200
300
400
500
600
700
800
A/s 1000 diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 800V, T j = 125C
35
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 800V, Tj = 125C
18
A
60A 30A 15A
14
25
12 20 10 15 8 10
60A 30A 15A
Irr
S
6 5 200 300 400 500 600 700 800
A/s 1000 di F/dt
4 200
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2.3
Page 5
2009-08-19
IDP30E120
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP30E120
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 10 -4 -7 10 0.02 0.01
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.3
Page 6
2009-08-19
IDP30E120
TO-220-2
Rev.2.3
Page 7
2009-08-19
IDP30E120
Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information Warnings
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2.3
Page 8
2009-08-19

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