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Precision, Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers
Preliminary Technical Data
FEATURES
Low TCVOS: 1 V/C typical Low input bias current: 5 pA typical at VS = 15 V Dual-supply operation: 4.5 V to 18 V Low noise: 7.2 nV/Hz typical at f = 1 kHz 0.7 VP-P at 0.1 Hz to 10 Hz Low distortion: 0.000005% No phase reversal Rail-to-Rail Output Unity gain stable
ADA4610-2
PIN CONFIGURATIONS
OUT A 1
ADA4610-2
-IN A 2 +IN A 3 V- 4
AD8512
ADA4610-2
8 7
V+ OUT B
02729-002
TOP VIEW 6 -IN B (Not to Scale) 5 +IN B
Figure 1. 8-Lead LFCSP (CP Suffix)
Figure 2. 8-Lead SOIC_N (R Suffix) & 8-Lead MSOP (RM Suffix)
APPLICATIONS
Instrumentation Medical Instruments Multipole filters Precision current measurement Photodiode amplifiers Sensors Audio
GENERAL DESCRIPTION
The ADA4610-2 is a dual channel, precision JFET amplifier that feature low offset voltage, input bias current, input voltage noise, input current noise, and rail-to-rail output. The combination of low offsets, low noise, and very low input bias currents makes these amplifiers especially suitable for high impedance sensor amplification and precise current measurements using shunts. The combination of dc precision, low noise, and fast settling time results in superior accuracy in medical instruments, electronic measurement, and automated test equipment. Unlike many competitive amplifiers, the ADA4610 maintain their fast settling performance even with substantial capacitive loads. Unlike many older JFET amplifiers, the ADA4610-2 does not suffer from output phase reversal when input voltages exceed the maximum common-mode voltage range. Fast slew rate and great stability with capacitive loads make the ADA4610-2 a perfect fit for high performance filters. Low input bias currents, low offset, and low noise result in a wide dynamic range of photodiode amplifier circuits. Low noise and distortion, high output current, and excellent speed make the ADA4610-2 a great choice for audio applications. The ADA4610-2 is specified over the -40C to +125C extended industrial temperature range. The ADA4610-2A is available in 8-lead narrow SOIC, 8-lead MSOP, and 8-lead LFCSP packages. The ADA4610-2B is available in 8-lead narrow SOIC package.
Rev. PrA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
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Preliminary Technical Data SPECIFICATIONS
@ VS = 15 V, VCM = 0 V, TA = 25C, unless otherwise noted. Table 1.
Parameter
INPUT CHARACTERISTICS Offset Voltage
ADA4610-2
Symbol
VOS
Conditions
B-Grade -40C < TA < +125C A-Grade -40C < TA < +125C (B-Grade) -40C < TA < +125C (A-Grade) -40C < TA < +125C -40C < TA < +85C -40C < TA < +125C
Min
Typ
TBD TBD 0.5 1 5
Max
0.4 TBD 1 TBD TBD TBD TBD TBD TBD TBD TBD TBD +12.5
Unit
mV mV mV mV V/C V/C pA pA nA pA pA nA V dB dB dB dB pF pF V V V V V V V V mA dB dB mA mA V/s MHz s s % Degrees
Offset Voltage Drift Input Bias Current
VOS/T IB
Input Offset Current
IOS -40C < TA < +85C -40C < TA < +125C
2
Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain Input Resistance Input Capacitance, Differential Mode Input Capacitance, Common Mode OUTPUT CHARACTERISTICS Output Voltage High
CMRR AVO RIN CINDM CINCM VOH
VCM = 12.5V -40C < TA < +125C RL = 2 k, VO = 13.5 V -40C < TA < +125C
-12.5 TBD TBD TBD TBD
113 107 TBD 2.5 5.4
Output Voltage Low
VOL
RL = 2 k -40C < TA < +125C RL = 600 -40C < TA < +125C RL = 2 k -40C < TA < +125C RL = 600 -40C < TA < +125C TBD VS = 2.5 V to 18 V -40C < TA < +125C IO = 0 mA -40C < TA < +125C RL = 2 k To 0.1%, 0 V to 10 V step, G = +1 To 0.01%, 0 V to 10 V step, G = +1 1 kHz, G = +1, RL = 2 k
14.8 TBD 14.2 TBD
14.9 14.3 -14.8 -14.7 40 TBD -14.7 TBD -14.6 TBD
Output Current Closed-Loop Output Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Settling Time Total Harmonic Distortion (THD) + Noise Phase Margin NOISE PERFORMANCE Peak-to-Peak Voltage Noise Voltage Noise Density
IOUT ZOUT PSRR ISY
TBD TBD
106 1.85 2 TBD
SR GBP tS THD + N M en p-p en
20 10 TBD TBD 0.000005 60 0.7 18 9.2 7.2 7.7 TBD TBD
Current Noise Density
in
0.1 Hz to 10 Hz bandwidth f = 10 Hz f = 100 Hz f = 1 kHz f = 10 kHz f = 1 kHz
TBD
V p-p nV/Hz nV/Hz nV/Hz nV/Hz fA/Hz
Rev. PrA | Page 2 of 4
Preliminary Technical Data SPECIFICATIONS
@ VS = 5 V, VCM = 0 V, TA = 25C, unless otherwise noted. Table 2.
Parameter
INPUT CHARACTERISTICS Offset Voltage
ADA4610-2
Symbol
VOS
Conditions
B-Grade -40C < TA < +125C A-Grade -40C < TA < +125C (B-Grade) -40C < TA < +125C (A-Grade) -40C < TA < +125C -40C < TA < +85C -40C < TA < +125C
Min
Typ
TBD TBD 0.5 1 TBD 5 2
Max
0.4 TBD 1 TBD TBD TBD TBD TBD TBD TBD TBD TBD +2.5
Unit
mV mV mV mV V/C V/C pA pA nA pA pA nA V dB dB dB dB pF pF V V V V V V V V mA dB dB mA mA V/s MHz s s % Degrees
Offset Voltage Drift Input Bias Current
VOS/T IB
Input Offset Current
IOS -40C < TA < +85C -40C < TA < +125C
Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain Input Resistance Input Capacitance, Differential Mode Input Capacitance, Common Mode OUTPUT CHARACTERISTICS Output Voltage High
CMRR AVO RIN CINDM CINCM VOH
VCM = 2.5V -40C < TA < +125C RL = 2 k, VO = 3.5 V -40C < TA < +125C
-2.5 TBD TBD TBD TBD
110 107 TBD 2.5 5.4
Output Voltage Low
VOL
RL = 2 k -40C < TA < +125C RL = 600 -40C < TA < +125C RL = 2 k -40C < TA < +125C RL = 600 -40C < TA < +125C TBD VS = 2.5 V to 18 V -40C < TA < +125C IO = 0 mA -40C < TA < +125C RL = 2 k To 0.1%, 0 V to 4 V step, G = +1 To 0.01%, 0 V to 4 V step, G = +1 1 kHz, G = +1, RL = 2 k
4.8 TBD 4.2 TBD
4.9 4.3 -4.8 -4.7 TBD TBD -4.7 TBD -4.6 TBD
Output Current Closed-Loop Output Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Settling Time Total Harmonic Distortion (THD) + Noise Phase Margin NOISE PERFORMANCE Peak-to-Peak Voltage Noise Voltage Noise Density
IOUT ZOUT PSRR ISY
TBD TBD
106 1.85 2 TBD
SR GBP tS THD + N M en p-p en
20 10 TBD TBD 0.000005 60 0.7 18 9.2 7.2 7.7 TBD TBD
Current Noise Density
in
0.1 Hz to 10 Hz bandwidth f = 10 Hz f = 100 Hz f = 1 kHz f = 10 kHz f = 1 kHz
TBD
V p-p nV/Hz nV/Hz nV/Hz nV/Hz fA/Hz
Rev. PrA | Page 3 of 4
Preliminary Technical Data ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Supply Voltage Input Voltage Output Short-Circuit Duration to GND Storage Temperature Range Operating Temperature Range Junction Temperature Range Lead Temperature (Soldering, 10 sec) Electrostatic Discharge (Human Body Model) Rating 18 V VS Observe derating curves -65C to +150C -40C to +125C -65C to +150C 300C 2000 V
ADA4610-2
Table 4. Thermal Resistance
Package Type 8-Lead MSOP (RM) 5-Lead SOT23 (RJ) 8-Lead LFCSP (CP) 8-Lead SOIC_N (R) 14-Lead SOIC_N (R) 16-Lead LFCSP (CP)
1
JA1 142 190 TBD 120 115 TBD
JC 45 92 TBD 45 36 TBD
Unit C/W C/W C/W C/W C/W C/W
JA is specified for worst-case conditions, that is, JA is specified for device soldered in circuit board for surface-mount packages. This was measured using a standard 4-layer board.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
Rev. PrA | Page 4 of 4
PR09646-0-1/11(PRA)

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