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PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 - 2170 MHz
Description
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2
PTFA210701F Package H-37265-2
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 550 mA, = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 35 30
Features
* * *
Drain Efficiency (%)
Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 42 dBm - Linear Gain = 16.5 dB - Efficiency = 27.0% - Intermodulation distortion = -37 dBc - Adjacent channel power = -42.5 dBc Typical CW performance, 2170 MHz, 30 V - Output power at P-1dB = 80 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 70 W (CW) output power
IM3 (dBc), ACPR (dBc)
-35
Efficiency
-40 -45
IM3 ACPR
25 20 15 10
-50 -55 -60 30 32 34 36 38 40 42 44
*
*
5
* *
Average Output Power (dBm)
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 550 mA, POUT = 18 W average 1 = 2135 MHz, 2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
15.5 28 --
Typ
16.5 29 -36.5
Max
-- -- -35.5
Unit
dB % dBc
D
IMD
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 02.1, 2009-02-18
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 550 mA, POUT = 70 W PEP, = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
-- -- --
Typ
16.5 41 -29.5
Max
-- -- --
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.125 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 550 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 70 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 190 1.09 -40 to +150 0.92
Unit
V V C W W/C C C/W
Ordering Information
Type and Version
PTFA210701E PTFA210701F V4 V4
Package Type
H-36265-2 H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended
Marking
PTFA210701E PTFA210701F
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 02.1, 2009-02-18
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 30 V, IDQ = 550 mA, POUT = 42.5 dBm
Two-tone Drive-up at Optimum IDQ
VDD = 30 V, IDQ = 550 mA, = 2140 MHz, tone spacing = 1 MHz Intermodulation Distortion (dBc)
10 5
-25 -30 -35 -40 -45 -50 -55 -60 -65 35 37 39 41 43 45 47 49 45 40
35 30 25
Gain (dB), Efficiency (%)
Input Return Loss (dB)
-5 -10
IM3
30 25
20 15
Return Loss
-15 -20
IM5 IM7
20 15 10 5
Gain
-25 -30
-35 10 2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Output Power, PEP (dBm)
Two-carrier WCDMA at Selected Biases
VDD = 30 V, = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-30 -35 450 mA 650 mA
18 17
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 550 mA, = 2170 MHz TCASE = 25C TCASE = 90C
60 50
3rd Order IMD (dBc)
-45 -50 -55 500 mA -60 30 32 34 36 38 40 42 44 550 mA 600 mA
Gain (dB)
-40
16 15 14
Gain
40 30 20
Efficiency
13 0 20 40 60 80 10 100
Average Output Power (dBm)
Output Power (W)
Data Sheet
3 of 10
Rev. 02.1, 2009-02-18
Drain Efficiency (%)
Drain Efficiency (%)
Efficiency
0
Efficiency
35
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 550 mA, = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW
-5
Voltage Sweep
IDQ = 550 mA, = 2140 MHz, tone spacing = 1 MHz, POUT (PEP) = 48.5 dBm
50
Adjacent Channel Power Ratio (dB)
-30 -35 -40 -45 -50 -55 30
Drain Efficiency (%)
3rd Order IMD (dBc)
40
-15 -20 -25 -30 -35 -40 -45 23 25 27 29 31 33
40
Efficiency
Efficiency IM3 Up
35 30 25 20
30 20 10 0
ACPR
32 34 36 38 40 42 44
Gain
15 10
Average Output Power (dBm)
Supply Voltage (V)
Intermodulation Distortion Products vs. Tone Spacing
VDD = 30 V, IDQ = 550 mA, = 2140 MHz, POUT = 48.5 dBm PEP
-20
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.15 A 0.44 A 0.73 A 1.10 A 2.20 A 3.30 A 4.41 A 5.51 A
Intermodulation Distortion (dBc)
3rd order
Normalized Bias Voltage (V)
-25 -30 -35 -40 -45 -50 -55 0 5 10 15 20 25
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20
5th 7th
30
35
40
Tone Spacing (MHz)
0
20
40
60
80
100
Case Temperature (C)
Data Sheet
4 of 10
Rev. 02.1, 2009-02-18
Gain (dB), Drain Efficiency (%)
ACPR Up ACPR Low
50
-10
45
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
D
Z Source
R 19.94 20.94 21.41 21.83 22.26 jX 1.61 0.77 0.11 -0.69 -2.09
Z Load
R 4.50 4.20 4.02 3.88 3.66 jX -2.87 -2.50 -2.29 -2.07 -1.66 Z0 = 50
Z Source
Z Load
MHz 2060 2110 2140 2170
G S
2220
- WAV ELE NGT H S T OW A
0.0
0.1
0.2
0.3
0.4
W ARD LOAD T HS TO L E NG VE
Z Load
2220 MHz 2060 MHz
2220 MHz
0.1
See next page for circuit information
Data Sheet
5 of 10
0.5
0 .1
Z Source
2060 MHz
Rev. 02.1, 2009-02-18
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2KV
QQ1 LM7805
Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R5 10 V
VDD
R6 1K V C5 R7 0.1F 1K V C6 1F
R8 5.1K V C7 0.01F C8 10pF C12 10pF C13 0.02F C14 1F
L1 C15 100F 50V C16 0.1F
VDD
+ C4
10F 35V
l8 R9 10 V
l9 C22 0.5pF l11 l12 l13 C23 0.5pF L2 C17 10pF C18 0.02F C19 1F C20 100F 50V C21 0.1F l14 l15 C24 0.8pF C25 10pF l16
a210701e_sch
C10 10pF
DUT
l3 l4 C11 1.3pF l5 l6 l7
RF_IN
l1
l2 C9 0.8pF
RF_OUT
l10
Reference circuit schematic for = 2140 MHz
Circuit Assembly Information
DUT PCB PTFA210701E or PTFA210701F 0.76 mm [.030"] thick, r = 3.48 LDMOS Transistor Rogers 4350 1 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz1
0.112 , 50.0 0.053 , 50.0 0.044 , 43.0 0.054 , 43.0 0.016 , 43.0 0.022 , 14.6 0.062 , 12.2 0.214, 61.0 0.211 , 53.0 0.042 , 6.5 0.043 , 6.5 / 16.2 0.023 , 16.2 / 50.0 0.010 , 53.0 0.130 , 53.0 0.116 , 53.0
Dimensions: L x W (mm)
9.53 x 1.78 4.52 x 1.78 3.73 x 2.18 4.57 x 2.18 1.37 x 2.18 1.73 x 8.76 4.88 x 10.82 18.36 x 1.22 17.91 x 1.57 3.25 x 21.84 3.30 x 21.84 / 7.80 1.88 x 7.80 / 1.57 0.89 x 1.57 11.07 x 1.57 9.88 x 1.57
Dimensions: L x W (in.)
0.375 x 0.070 0.178 x 0.070 0.147 x 0.086 0.180 x 0.086 0.054 x 0.086 0.068 x 0.345 0.192 x 0.426 0.723 x 0.048 0.705 x 0.062 0.128 x 0.860 0.130 x 0.860 / 0.307 0.074x 0.307 / 0.062 0.035 x 0.062 0.436 x 0.062 0.389 x 0.062
l1 l2 l3 l4 l5 l6 l7 l8 l9, l10 l11 l12 (taper) l13 (taper) l14 l15 l16
Data Sheet
1Electrical characteristics are rounded.
6 of 10
Rev. 02.1, 2009-02-18
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C5 R4 R5 R6 R7 C6 C7 R8 C8 C10 C4 C3 R3 R1 R2
C1 LM
VDD
QQ1 C2 C13 C12 C14 L1
Q1 C15 R9 C22 C23 C24 C25 C20
VDD
C16
RF_IN
C9 C11
RF_OUT
C21
VDD
L2
C17 C19 C18
RO4350_.030
A210701in_01
RO4350_.030
A210701out_01
a210701e_assy
Reference circuit assembly diagram (not to scale)*
Component
Description
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 445-1411-2-ND 200B 103 100B 100 100B 0R8 100B 1R3 200B 203 PCE3718CT-ND 100B 0R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND P5.1KECT-ND
C1, C2, C3 Capacitor, 0.001 F C4 Tantalum capacitor, 10 F, 35 V C5, C16, C21 Capacitor, 0.1 F C6, C14, C19 Ceramic capacitor, 1 F C7 Capacitor, 0.01 F C8, C10, C12, C17, C25 Ceramic capacitor, 10 pF C9, C24 Ceramic capacitor, 0.8 pF C11 Ceramic capacitor, 1.3 pF C13, C18 Capacitor, 0.02 F C15, C20 Electrolytic capacitor, 100 F, 50 V C22, C23 Ceramic capacitor, 0.5pF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage regulator R1 Chip resistor 1.2K ohms R2 Chip resistor 1.3K ohms R3 Chip resistor 2K ohms R4 Potentiometer 2K ohms R5, R9 Chip resistor 10 ohms R6, R7 Chip resistor 1K ohms R8 Chip resistor 5.1K ohms *Gerber Files for this circuit available on request Data Sheet
7 of 10
Rev. 02.1, 2009-02-18
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36265-2
(45 X 2.03 [.080]) 2X 7.11 [.280] C L
D
2.590.51 [.102.020] 15.340.51 [.604.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [R.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] SPH 1.57 [.062] 4X R1.52 [R.060]
3.560.38 [.140.015 0.0381 [.0015] -A2007- 1- 6_h- 6+37265_POs. sd_h- 62652 1 1 3 v 3 -
20.31 [.800]
1.02 [.040]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
8 of 10
Rev. 02.1, 2009-02-18
PTFA210701E PTFA210701F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37265-2
(45 X 2.03 [.080])
C L
2.590.51 [.102.020]
D
15.34.51 [.604.020]
LID 10.160.25 [.400.010] FLANGE 10.16 [.400]
C L
10.16 [.400]
G
2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX
LID 10.160.25 [.400.010] SPH 1.57 [.062]
|0.025 [.001]|-A3.56.38 [.140.015]
S
10.16 [.400]
1.02 [.040]
071119_h-36+37265_POs_h-37265-2
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6 Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 10
Rev. 02.1, 2009-02-18
PTFA210701E/F Confidential, Limited Internal Distribution Revision History: 2009-02-18 2007-11-01, Data Sheet Previous Version: Page 1, 2, 8, 9 7 Subjects (major changes since last revision) Update product to V4, with new package technologies. Fixed typing error
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02.1, 2009-02-18

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