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MMST5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMST5551) Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4)
A C
SOT-323 Dim A
BC
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0
Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8
B C D E G H J K L M
B G H K
E
Mechanical Data
* * Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: K4M, See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate)
0.65 Nominal
M
* * * * * * *
J
D
E
L
C
All Dimensions in mm
B
E
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value -160 -150 -5.0 -200 200 625 -55 to +150 Unit V V V mA mW C/W C
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30170 Rev. 9 - 2
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MMST5401
(c) Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure
Notes:
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -160 -150 -5.0 50 60 50 40 100 Max -50 -50 240 -0.2 -0.5 -1.0 6.0 200 300 8.0 Unit V V V nA A nA Test Condition IC = -100A, IE = 0 IC = -1.0mA, IB = 0 IE = -10A, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100C VEB = -3.0V, IC = 0 IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -10V, f = 1.0MHz, IE = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -200A, RS = 10, f = 1.0kHz
hFE VCE(SAT) VBE(SAT) Cobo hfe fT NF
V V pF MHz dB
5. Short duration pulse test used to minimize self-heating effect.
200
Note 1
10.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
150
1.0
100
0.1
50
0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 200
0.01 1
10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
DS30170 Rev. 9 - 2
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MMST5401
(c) Diodes Incorporated
10,000
VCE = 5V
1.0
VCE = 5V
VBE(ON), BASE EMITTER VOLTAGE (V)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1
TA = 150C T A = 25C TA = -50C
hFE, DC CURRENT GAIN
1,000
T A = 150C
100
TA = 25C
10
TA = -50C
1 1
10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current
1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current
1,000
VCE = 10V
ft, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current 1
DS30170 Rev. 9 - 2
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MMST5401
(c) Diodes Incorporated
Ordering Information (Notes 4 and 6)
Device MMST5401-7-F Packaging SOT-323 Shipping 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4M
K4M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code Month Code
1998 J Jan 1
1999 K Feb 2
2000 L
2001 M Mar 3
2002 N Apr 4
2003 P May 5
YM
2004 R
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
Jun 6
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30170 Rev. 9 - 2
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MMST5401
(c) Diodes Incorporated

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