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| IDW100E60 Fast Switching EmCon Diode Features: * 600 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * 175 C junction operating temperature * Easy paralleling * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models: http://www.infineon.com/emcon/ Applications: * Welding * Motor drives A C PG-TO-247-3 Type IDW100E60 Maximum Ratings Parameter VRRM 600V IF 100A VF,Tj=25C 1.65V Tj,max 175C Marking D100E60 Package PG-TO-247-3 Symbol VRRM IF Value 600 150 104 96 Unit V A Repetitive peak reverse voltage Continuous forward current TC = 25C TC = 90C TC = 100C Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave Maximum repetitive forward current TC = 25C, tp limited by tj,max, D = 0.5 Power dissipation TC = 25C TC = 90C TC = 100C Operating junction and storage temperature Soldering temperature 1.6mm (0.063 in.) from case for 10 s IFSM IFRM Ptot 400 300 A A W 375 212 198 Tj, Tstg TS -55...+175 260 C C Power Semiconductors 1 Rev. 2.1 Nov 09 IDW100E60 Thermal Resistance Parameter Characteristic Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJC 0.40 K/W Symbol Conditions Max. Value Unit Static Characteristic Collector-emitter breakdown voltage Diode forward voltage VRRM VF IR=0.25mA 600 - 1.65 1.65 - 2.0 - V I F = 100A T j = 25 C T j = 17 5 C Reverse leakage current IR V R = 6 00V T j = 25 C T j = 17 5 C 40 1000 A Dynamic Electrical Characteristics Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irr dI r r / dt T j = 25 C V R = 4 00V, I F = 100A , dI F / dt= 120 0A / s 120 3.6 49.5 750 ns C A A/s trr Qrrm Irr dI r r / dt T j = 12 5 C V R = 4 00V, I F = 100A , dI F / dt= 120 0A / s - 168 5.8 61.6 705 - ns C A A/s trr Qrrm Irr dI r r / dt T j = 17 5 C V R = 4 00V, I F = 100A , dI F / dt= 120 0A / s - 200 7.8 67.0 650 - ns C A A/s Power Semiconductors 2 Rev. 2.1 Nov 09 IDW100E60 150A 350W 300W 250W 200W 150W 100W 50W 0W 25C POWER DISSIPATION 120A IF, FORWARD CURRENT 90A 60A Ptot, 30A 50C 75C 100C 125C 150C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 1. Power dissipation as a function of case temperature (Tj 175C) TC, CASE TEMPERATURE Figure 2. Diode forward current as a function of case temperature (Tj 175C) 250A TJ=25C 2.0V IF=200A 200A VF, FORWARD VOLTAGE 175C IF, FORWARD CURRENT 1.5V 100A 150A 50A 1.0V 100A 0.5V 50A 0A 0V 1V 2V 0.0V 0C 50C 100C 150C VF, FORWARD VOLTAGE Figure 3. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERATURE Figure 4. Typical diode forward voltage as a function of junction temperature Power Semiconductors 3 Rev. 2.1 Nov 09 IDW100E60 Qrr, REVERSE RECOVERY CHARGE 200ns TJ=175C 8C 7C 6C 5C 4C 3C 2C 1C 0C 500A/s TJ=175C trr, REVERSE RECOVERY TIME 150ns 100ns TJ=25C TJ=25C 50ns 0ns 500A/s 1000A/s 1500A/s 1000A/s 1500A/s diF/dt, DIODE CURRENT SLOPE Figure 5. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=100A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 6. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 100A, Dynamic test circuit in Figure E) -1200A/s 70A REVERSE RECOVERY CURRENT TJ=175C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT -1000A/s 60A 50A 40A 30A 20A 10A 0A TJ=25C -800A/s TJ=25C -600A/s -400A/s Irr, -200A/s TJ=175C 1000A/s 1500A/s 500A/s 1000A/s 1500A/s 0A/s 500A/s diF/dt, DIODE CURRENT SLOPE Figure 7. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 100A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 8. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=100A, Dynamic test circuit in Figure E) Power Semiconductors 4 Rev. 2.1 Nov 09 IDW100E60 ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 -1 10 K/W 0.2 0.1 0.05 0.02 0.01 R,(K/W) 0.03814 0.17186 0.09381 0.07453 0.02165 R1 , (s) 0.3724 0.07367 6.877 E-3 4.143 E-4 4.145 E-5 R2 10 K/W -2 single pulse C 1 = 1 /R 1 C 2 = 2 /R 2 1s 10s 100s 1ms 10ms 100ms 1s tP, PULSE WIDTH Figure 9. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 5 Rev. 2.1 Nov 09 IDW100E60 Power Semiconductors 6 Rev. 2.1 Nov 09 IDW100E60 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 7 Rev. 2.1 Nov 09 |
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