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BSB053N03LP G
OptiMOSTM2 Power-MOSFET
Features * Pb-free plating; RoHS compliant * Dual sided cooling * Low profile (<0.7 mm) * 100% avalanche tested * Qualified for consumer level application * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Optimized for high switching frequency DC/DC converter * Low parasitic inductance
Product Summary V DS R DS(on),max ID 30 5.3 71 V m A
MG-WDSON-2
* Compatible with DirectFET(R) package MP footprint and outline 1)
Type BSB053N03LP G
Package MG-WDSON-2
Outline MP
Marking 3003
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=10 V, T A=25 C, R thJA=55 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage
1) TM
Value 71 45 17 284 50 75 20
Unit A
I D,pulse I AS E AS V GS
T C=25 C T C=25 C I D=44 A, R GS=25
mJ V
CanPAK uses DirectFET (R) technology licensed from International Rectifier Corporation. DirectFET(R) is a registered trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
BSB053N03LP G
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=55 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 42 2.3 -40 ... 150 55/150/56 C Unit W
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area2) 1.0 3 55 K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=10 V, I D=30 A Gate resistance Transconductance
2)
30 1 -
0.1
2.2 1
V
A
-
10 10 7.1 4.4 0.5 65
100 100 8.9 5.3 S nA m
RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A
32
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information
3)
Rev. 2.0
page 2
2009-05-11
BSB053N03LP G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 6.3 3.1 4.1 7.2 14 3.2 29 6.7 18 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 2000 700 91 4.2 4.0 19 3.4 2700 930 ns pF Values typ. max. Unit
Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage
Q g(sync) Q oss
-
12 16
-
nC
IS I S,pulse V SD
T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s
-
0.83
38 284
A
V
Reverse recovery charge
4) 5)
Q rr
-
-
28
nC
See figure 13 for more detailed information See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2009-05-11
BSB053N03LP G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V
50
80
40 60
30
P tot [W]
I D [A]
20 10 0 0 40 80 120 160
40
20
0 0 40 80 120 160
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
103
limited by on-state resistance 1 s 10 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
0.5
102
100 s
100
0.2 0.1 0.05 0.02 0.01 10 ms single pulse
I D [A]
DC
101
Z thJC [K/W]
2
1 ms
10-1
100
10-2
10-1 10
-1
10-3 10
0
10
1
10
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 2.0
page 4
2009-05-11
BSB053N03LP G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
200
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
16
10 V
5V 4.5 V
3.2 V
150
12
3.5 V
R DS(on) [m]
I D [A]
100
4V
8
4.5 V
4V
5V 10 V
50
3.5 V
4
3.2 V 3V 2.8 V
0 0 1 2 3
0 0 10 20 30 40 50
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
160
8 Typ. forward transconductance g fs=f(I D); T j=25 C
150 140
140
130 120
120
110 100 90
100
g fs [S]
150 C 25 C
I D [A]
80
80 70 60 50
60
40
40 30
20
20 10 0 4 5 0 40 80 120 160
0 0 1 2 3
V GS [V]
I D [A]
Rev. 2.0
page 5
2009-05-11
BSB053N03LP G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A
10
2.5
8
2
98 %
R DS(on) [m]
6
typ
4
V GS(th) [V]
140 180
1.5
1
2
0.5
0 -60 -20 20 60 100
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
1000
25 C
150 C, 98%
Ciss
10
3
Coss
100
C [pF]
I F [A]
150 C 25 C, 98%
102
Crss
10
101 0 10 20 30
1 0.0 0.5 1.0 1.5 2.0
V DS [V]
V SD [V]
Rev. 2.0
page 6
2009-05-11
BSB053N03LP G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD
12
10
25 C
6V
15 V
24 V
8
100 C
10
125 C
V GS [V]
100 1000
I AV [A]
6
4
2
1 1 10
0 0 10 20 30
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
36
V GS
34
Qg
32
30
V BR(DSS) [V]
28
26
V g s(th)
24
22
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
20
T j [C]
Rev. 2.0
page 7
2009-05-11
BSB053N03LP G
Package Outline
Rev. 2.0
page 8
2009-05-11
BSB053N03LP G
Package Outline PG-TDSON-8: Tape CanPAK
Dimensions in mm Rev. 2.0 page 9 2009-05-11
BSB053N03LP G
Dimensions in mm Raccomanded stencil thikness 150m
Rev. 2.0
page 10
2009-05-11
BSB053N03LP G
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 11
2009-05-11

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