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PTF180101M
High Power RF LDMOS Field Effect Transistor 10 W, 1.0 - 2.0 GHz
Description
The PTF180101M is an unmatched 10-watt GOLDMOS (R) FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.
PTF180101M Package PG-RFP-10
EDGE Performance
VDD = 28v, I DQ = 180 mA, = 1960 MHz
Features
* Typical EDGE performance - Average output power = 4.0 W - Gain = 17 dB - Efficiency = 31% - EVM = 1.3 % Typical CW performance - Output Power at P-1dB = 10 W - Gain = 16 dB - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power Pb-free and RoHS compliant
1.50 EVM RMS (Average %)
40
*
1.25 30 Drain Efficiency (%) .
1.00
Efficiency
20
* * * *
0.75 EVM 0.50 29 30 31 32 33 34 35 36 37 Output Power (dBm)
10
0
*
RF Characteristics
Two-Tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 1990 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
16.5 35 --
Typ
-- -- --
Max
-- -- -28
Unit
dB % dBc
D
IMD
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 8
*See Infineon distributor for future availability.
Rev. 05.1, 2009-02-18
PTF180101M
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 A VDS = 28 V, IDQ = 180 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.83 3.2 --
Max
-- 1.0 -- 4.0 1.0
Unit
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 10 W DC ) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 150 18.8 0.15 -40 to +150 6.5
Unit
V V C W W/C C C/W
Ordering Information
Type
PTF180101M
Package Outline
PG-RFP-10
Package Description
Molded plastic, SMD
Marking
0181
*See Infineon distributor for future availability. Data Sheet 2 of 8 Rev. 05.1, 2009-02-18
PTF180101M
Typical Performance (data taken in production test fixture)
CW Performance
VDD = 28 V, I DQ = 180 mA, = 1960 MHz
Two-Tone Performance
VDD = 28 V, I DQ = 180 mA, = 1960/1961 MHz
20 19 Gain (dB) 18 17 16 15 14 15 20 25 30 35 40 45 Power Output (dBm) Efficiency Gain
60 50 Drain Efficiency (%) 40 30 20 10 0
-20 -30 -40 IMD (dBc) -50 -60 -70 -80 -90 25 30 35
3rd order 5th order
70
50 40
7th order Efficiency
30 20 10 0
40
45
Output Power (dBm), PEP
P-1dB Broadband Performance
VDD = 28 V, I DQ = 180 mA 20 60 Modulation Spectrum (dBc)
EDGE Performance
VDD = 28 V, I DQ = 180 mA, = 1960 MHz Offset f = 200 kHz -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 29 30 31 32 33 34 35 36 37 Offset = 400 kHz Offset = 600 kHz
Gain & Return Loss (dB)
15 10 5 0 -5 -10 -15 -20 -25 1920 1940 1960 1980
Efficiency
50
Input Return Loss
40
30 2000
Frequency (MHz)
Drain Efficiency (%).
Gain
Output Power (dBm)
Data Sheet
3 of 8
Rev. 05.1, 2009-02-18
Drain Efficiency (%)
60
PTF180101M
Typical Performance (cont.)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current.
1.04 0.05 0.28 0.51 0.74 0.97 1.2
Normalized Bias Voltage
1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20 0 20 40 60 80 100
Case Temperature (C)
Broadband Circuit Impedance
Z Source Z Load
0. 1
D
WA
Z0 = 50
G S
Z Load
0.0
R 2.89 2.88 2.87 2.85 2.84 2.82 2.81 2.80 2.78 2.77 2.76 jX -1.38 -1.30 -1.21 -1.13 -1.05 -0.97 -0.89 -0.81 -0.73 -0.65 -0.57 4 of 8
2000 MHz
0.1
MHz 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 Data Sheet
R 0.80 0.79 0.79 0.78 0.77 0.77 0.76 0.75 0.75 0.74 0.74
jX -3.71 -3.66 -3.61 -3.56 -3.51 -3.47 -3.42 -3.37 -3.33 -3.28 -3.24
W ARD LOAD T HS T O L E NG VE
Frequency
Z Source
Z Load
1900 MHz 2000 MHz 1900 MHz
0. 1
Z Source
W <---
A
0. 2 Rev. 05.1, 2009-02-18
PTF180101M
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805
Q1 B C P56 C2 0.001F R3 2KV C3 0.001F R4 2KV
VDD
R9 1V R6 10V C5 0.1F R7 1K V C6 + 10pF C7 10F 35V C8 10pF L1 C13 10pF R8 220V
R5 10V
+ C4
10F 35V
l7
+
C14 10F 50V
C15 10pF
C16 0.1F
+
VDD
C17 10F 50V
l10 l6
C10 10pF C12 4.7pF DUT C18 10pF
RF_IN
l1
l2
C9 0.9pF
l3
W1 1/2 TURN
l4
l5
C11 4.7pF
l8
l9
l11
RF_OUT
180101m_sch
Reference circuit schematic for = 1990 MHz
Circuit Assembly Information DUT PCB Microstrip PTF180101M 0.76 mm [.030"] thick, r = 4.5 Electrical Characteristics at 1990 MHz 1 0.059 0.093 0.016 0.129 0.026 0.153 0.194 0.014 0.236 0.187 0.077 , 50.0 , 50.0 , 50.0 , 9.6 , 9.6 , 78.0 , 78.0 , 12.9 , 12.9 , 66.0 , 50.0 LDMOS Transistor Rogers RO4320 Dimensions: L x W (mm) 5.69 x 1.60 8.48 x 1.60 1.09 x 1.60 10.77 x 14.22 2.13 x 14.22 14.48 x 0.71 18.39 x 0.71 1.27 x 10.16 19.91 x 10.16 17.40 x 0.99 6.99 x 1.60 2 oz. copper Dimensions: L x W (in.) 0.224 0.334 0.043 0.424 0.084 0.570 0.724 0.050 0.784 0.685 0.275 x x x x x x x x x x x 0.063 0.063 0.063 0.560 0.560 0.028 0.028 0.400 0.400 0.039 0.063
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11
1Electrical characteristics are rounded.
Data Sheet
5 of 8
Rev. 05.1, 2009-02-18
PTF180101M
Reference Circuit (cont.)
R5 R3 C3 R1 R4
+
SHIM SHIM QQ1 C2 C13 R9 C14 L1 C17
C1 LM
C5 C4 C8
10 35V
VDD
10 35V
C6
R6 R7 C7
Q1
+
R2 R8 C15 C16
RF_IN C9 W1
C10
C12 C11
C18
RF_OUT
180101M_C_01
180101m _assy
Reference circuit assembly diagram (not to scale)* Component C1, C2, C3 C4, C7 C5, C16 C6, C8, C10, C13, C15, C18 C9 C11, C12 C14, C17 L1 Q1 QQ1 R1 R2 R3 R4 R5, R6 R7 R8 W1 Description Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1F Ceramic capacitor, 10 pF Ceramic capacitor, 0.9 pF Ceramic capacitor, 4.7pF Tantalum capacitor, 10 F, 50 V Ferrite, 4mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 1 k-ohms Chip Resistor 220 ohms Wire 0.250" Suggested Manufacturer Digi-Key Digi-Key Digi-Key ATC ATC ATC Digi-Key Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key N/A P/N or Comment PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 100 100B 0R9 100B 4R7 TPSE106K050R0400 BDS3/3/4.6-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND P221ECT-ND AUG22, SOLID
*Gerber Files for this circuit available on request Data Sheet 6 of 8 Rev. 05.1, 2009-02-18
PTF180101M
Package Outline Specifications Package PG-RFP-10 (TSSOP-10 Outline)
0.15 MAX.
1.1 MAX.
0.85 0.1
H
3 0.1
C
+0.08 0.125-0.05
A
0.22 0.05
0.09
0.5
0.1 A
M
0.08
ABC
4.9
0.42 -0.10
+0.15
0.25
M
6 MAX.
ABC
PG-RFP-10
10
6
1 3 0.1
5
B
Index marking
Notes: Unless otherwise specified 1. Dimensions are mm 2. Lead thickness: 0.09 3. Pins: 1 - 5 = gate, underside = source, 6 - 10 = drain Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
7 of 8
Rev. 05.1, 2009-02-18
PTF180101M Confidential--Limited Distribution Revision History: 2009-02-18 2005-12-06, Data Sheet Previous version: Page all 6 Subjects (major changes since last revision) Remove Preliminary designation Fixed typing error
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 05.1, 2009-02-18

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