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APTGF150A60T3AG
Phase leg NPT IGBT Power Module Power Module
29 30 31 32 13
VCES = 600V IC = 150A @ Tc = 100C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
4 3
Features
26 22 27 23 28 25 R1
*
8 7
16
18
19
20
14
28 27 26 25 29 30
23 22
20 19 18 16 15
* * * * *
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * * * * * Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C
TC = 100C
TC = 25C TC = 25C TJ = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF150A60T3AG - Rev 0
Max ratings 600 230 150 400 20 833 400A @ 480V
Unit V A V W
July, 2008
APTGF150A60T3AG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 2 2.2 5.5 Max 250 2.5 6.5 400 Unit A V V nA
4.5
Dynamic Characteristics
Symbol Characteristic Cies Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=200A Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A RG = 1.5 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 200A RG = 1.5 VGE = 15V Tj = 125C VBus = 300V IC = 200A Tj = 125C RG = 1.5 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 9 0.8 480 25 10 130 20 25 11 150 30 2 mJ 6 900 A Max Unit nF nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C
Tc = 100C
Min 600
Typ
Max 35 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
120 1.7 2 1.4 70 140 200 1380
2.3 V
July, 2008 2-5 APTGF150A60T3AG - Rev 0
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTGF150A60T3AG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.15 0.36 150 125 100 4.7 110 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGF150A60T3AG - Rev 0
July, 2008
17
28
APTGF150A60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V) 400 350 300 IC (A)
TJ=125C TJ=25C
Output Characteristics 400 350 300 IC (A) 250 200 150
TJ = 125C VGE=15V VGE=12V
VGE=20V
250 200 150 100 50 0 0 0.5 1 1.5 2 VCE (V)
TJ=125C
100 50 0 2.5 3 3.5 0 1 2 3 VCE (V)
VGE=9V
4
5
400 350 300
Transfert Characteristics
TJ=25C
Energy losses vs Collector Current 12 9 E (mJ) 6 3
VCE = 300V VGE = 15V RG = 1.5 TJ = 125C
Eoff
250 IC (A) 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 10
VCE = 300V VGE =15V IC = 200A TJ = 125C TJ=125C TJ=25C
Eon
0 0 100 200 IC (A) Reverse Bias Safe Operating Area 500
Eoff
300
400
7.5 E (mJ)
400 IC (A) 300 200 100 0
VGE=15V TJ=125C RG=1.5
5
Eon
2.5
0 0 2 4 6 8 Gate Resistance (ohms) 10
0
100
200
300 VCE (V)
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.9 0.12
IGBT
0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.08
0.04
0.05 0 0.00001
rectangular Pulse Duration (Seconds)
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APTGF150A60T3AG - Rev 0
July, 2008
APTGF150A60T3AG
Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 240 200 160 120 80 40 0 0 50 100 150 IC (A) 200 250 300
hard switching ZVS ZCS VCE=300V D=50% RG=1.5 TJ=125C TC=75C
Forward Characteristic of diode 400 350 300 250 IF (A) 200 150 100 50 0 0 0.5 1 1.5 VF (V) 2 2.5
TJ=25C TJ=125C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.9 0.3
Diode
0.7 0.5 0.3
0.2
0.1 0.1 0 0.00001 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF150A60T3AG - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2008

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