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DMG4435SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
* * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate)
NEW PRODUCT
S S S G
D D D D
Top View
Top View Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS TA = 25C TA = 85C ID IDM Value -30 25 -7.3 -4.7 -80 Unit V V A A
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4)
Steady State (VGS = -4.5)
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.3 96.5 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper. The value in any given application depends on the user's specific board design. 4. Repetitive rating, pulse width limited by junction temperature.
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
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(c) Diodes Incorporated
DMG4435SSS
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min -30 -1.0 Typ -1.7 13 15 21 22 -0.74 1614 226 214 6.8 35.4 18.9 4.6 5.7 8.6 12.7 44.9 22.8 Max -1.0 100 -2.5 16 20 29 -1.0 Unit V A nA V m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = -1mA VDS = -30V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = -250A VGS = -20V, ID = -11A VGS = -10V, ID = -10A VGS = -5V, ID = -5A VDS = -5V, ID = -10A VGS = 0V, IS = -1A VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -10V, VDS = -15V, ID = -10A VGS = -5V, VDS = -15V, ID = -10A
NEW PRODUCT
Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
VDS = -15V, VGS = -10V, RL = 1.5, RGEN = 3,
5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing.
30
VGS = -10V
30
VDS = -5V
25 -ID, DRAIN CURRENT (A)
VGS = -4.5V VGS = -4.0V
25 -ID, DRAIN CURRENT (A)
20
20
15
VGS = -3.5V VGS = -3.0V
15
10
10
TA = 150C T A = 125C
5
VGS = -2.2V VGS = -2.5V
5 0 2 0
TA = 85C TA = 25C TA = -55C
0
0
0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic
0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
4
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
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(c) Diodes Incorporated
DMG4435SSS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.06
0.04
0.05
VGS = -4.5V
0.04
T A = 150C TA = 125C TA = 85C
0.03
0.03
0.02
VGS = -4.5V
NEW PRODUCT
0.02
TA = 25C TA = -55C
VGS = -10V
0.01
0.01 0 0 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 5 30
0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30
1.6
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
0.04
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.4
VGS = -4.5V ID = -10A
0.03
VGS = -4.5V ID = -10A
1.2
VGS = -10V ID = -20A
0.02
1.0
0.01
0.8
VGS = -10V ID = -20A
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 30
0 -50
-25
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
3.0 -VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.5
25 -IS, SOURCE CURRENT (A)
2.0
ID = -1mA
20
1.5
ID = -250A
15
T A = 25C
1.0
10
0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
5 0 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
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(c) Diodes Incorporated
DMG4435SSS
10,000
f = 1MHz
10,000
-IDSS, LEAKAGE CURRENT (nA)
TA = 150C
1,000
T A = 125C
Ciss
1,000
Coss Crss
100
T A = 85C
NEW PRODUCT
100
10
T A = 25C
10
1
0
5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance
30
0
10 20 -VDS, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10 VGS(TH), GATE-THRESHOLD VOLTAGE (V) 9 8 7 6 5 4 3 2 1 0 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Threshold Voltage vs. Total Gate Charge
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0
5
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 98C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
10
100
1,000
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
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March 2010
(c) Diodes Incorporated
DMG4435SSS
Ordering Information
Part Number DMG4435SSS-13
Notes:
(Note 7) Case SO-8 Packaging 2500 / Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
G4435SS YY WW
Logo Part no. Xth week: 01~53 Year: "09" = 2009
Package Outline Dimensions
SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm
E1 E A1 L
0.254
Gauge Plane Seating Plane
Detail `A'
h 45 A2 A A3 e D b 7~9
Detail `A'
Suggested Pad Layout
X
C1 C2 Y
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
5 of 6 www.diodes.com
March 2010
(c) Diodes Incorporated
DMG4435SSS
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
NEW PRODUCT
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMG4435SSS
Document number: DS32041 Rev. 2 - 2
6 of 6 www.diodes.com
March 2010
(c) Diodes Incorporated

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