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TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
Low Loss DuoPack :
* * * * * * * * * * *
IGBT in 2nd generation TrenchStop(R) with soft, fast recovery anti-parallel EmCon diode
C
Best in class TO247 Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 40A VCE(sat),Tj=25C 1.75V Tj,max 175C Marking Code K40T1202 Package PG-TO-247-3
G
E
PG-TO-247-3
Type IKW40N120T2
Maximum Ratings Parameter Collector-emitter voltage DC collector current (Tj=150C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C DC Diode forward current (Tj=150C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+175 -55...+150 260 C
3)
Symbol VCE IC
Value 1200 752 40
Unit V A
ICpuls IF
160 160
752 40 IFpuls VGE tSC Ptot 160 20 10 480 V s W
VGE = 15V, VCC 600V, Tj,start 175C
Wavesoldering only, temperature on leads only
1 2
J-STD-020 and JESD-022 Limited by bond wire 3) Allowed number of short circuits:
<1000; time between short circuits: >1s. 1 Rev. 2.2 Sep 08
Power Semiconductors
TrenchStop 2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJA RthJCD RthJC Symbol
(R)
nd
IKW40N120T2
Generation Series
Conditions
Max. Value 0.31 0.53 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V(BR)CES VCE(sat) V G E = 0 V , I C =5 0 0 A VGE = 15V, IC=40A Tj=25C Tj=150C Tj=175C Diode forward voltage VF V G E = 0 V , I F =4 0 A Tj=25C Tj=150C Tj=175C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES IC=1.5mA,VCE=VGE V C E = 1 2 0 0 V, VGE=0V Tj=25C Tj=150C Tj=175C Gate-emitter leakage current Transconductance IGES gfs VCE=0V,VGE=20V VCE=20V, IC=40A 21 0.4 4.0 20 200 nA S 5.2 1.75 1.80 1.80 5.8 2.2 6.4 mA 1.75 2.25 2.3 2.2 1200 V Symbol Conditions Value min. typ. max. Unit
Power Semiconductors
2
Rev. 2.2
Sep 08
TrenchStop 2
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) Ciss Coss Crss QGate LE VCE=25V, VGE=0V, f=1MHz
(R)
nd
IKW40N120T2
Generation Series
-
2360 230 125 192 13
-
pF
VCC=960V, IC=40A VGE=15V
nC nH A
VGE=15V,tSC10s VCC = 600V, Tj,start = 25C Tj.start = 175C
220 156
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt Tj=25C, VR=600V, IF=40A, d i F / d t = 9 5 0 A/ s 258 3.3 23 350 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets Tj=25C, VCC=600V,IC=40A, VGE=0/15V, RG=12, L2)=80nH, C2)=67pF Energy losses include "tail" and diode reverse recovery. 33 28 314 94 3.2 2.05 5.25 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a n d Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.2 Sep 08
Power Semiconductors
TrenchStop 2
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt Tj=175C td(on) tr td(off) tf Eon Eoff Ets Symbol
(R)
nd
IKW40N120T2
Generation Series
Conditions
Value min. typ. 32 28 405 195 4.5 3.8 8.3 480 6.6 31 200 max. -
Unit
Tj=175C VCC=600V,IC=40A, VGE=0/15V, RG= 12, L1)=180nH, C1)=67pF Energy losses include "tail" and diode reverse recovery.
ns
mJ
ns C A A/s
VR=600V, IF=40A, d i F / d t = 9 5 0 A/ s
1)
Leakage inductance L a n d Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2.2 Sep 08
Power Semiconductors
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
160A 140A TC=80C
100A
tp=3s
10s
IC, COLLECTOR CURRENT
120A 100A 80A 60A 40A 20A 0A 10Hz TC=110C
IC, COLLECTOR CURRENT
10A
50s
150s 1A 500s 20ms DC
Ic
Ic
0.1A 1V
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
Figure 1.
f, SWITCHING FREQUENCY Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 12)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
70A
400W
60A
IC, COLLECTOR CURRENT
POWER DISSIPATION
300W
50A 40A 30A 20A 10A
200W
Ptot,
100W
0W 25C
50C
75C
100C
125C
150C
0A 25C
75C
125C
Figure 3.
TC, CASE TEMPERATURE Maximum power dissipation as a function of case temperature (Tj 175C)
Figure 4.
TC, CASE TEMPERATURE Maximum collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
5
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
150A 20V 125A VGE=17V
150A 20V 125A VGE=17V 15V 100A 13V 11V 75A 9V 7V
IC, COLLECTOR CURRENT
15V 100A 13V 11V 75A 9V 7V
IC, COLLECTOR CURRENT
50A
50A
25A
25A
0A 0V 1V 2V 3V 4V 5V
0A 0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
140A 120A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V -50C IC=40A IC=20A IC=8A IC=80A
IC, COLLECTOR CURRENT
100A 80A 60A 40A 20A 0A TJ=175C 25C 0V 2V 4V 6V 8V 10V 12V
0C
50C
100C
150C
Figure 7.
VGE, GATE-EMITTER VOLTAGE Typical transfer characteristic (VCE=20V)
Figure 8.
TJ, JUNCTION TEMPERATURE Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
1000ns td(off)
1000 ns td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
tf 100 ns
td(on) 10ns tr
td(on)
10 ns
1ns 20A 40A 60A
tr
5
15
25
35
Figure 9.
IC, COLLECTOR CURRENT Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=12, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6.5V 6.0V 5.5V 5.0V typ. 4.5V 4.0V 3.5V min.
t, SWITCHING TIMES
100ns tf td(on) tr
max.
10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA)
Power Semiconductors
7
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
20.0mJ
*) Eon and Etsinclude losses due to diode recovery
*) Eon and Ets include losses due to diode recovery
Ets*
E, SWITCHING ENERGY LOSSES
15.0mJ
Ets*
E, SWITCHING ENERGY LOSSES
10.0 mJ
7.5 mJ Eon* 5.0 mJ Eoff
10.0mJ
Eon*
5.0mJ
Eoff
2.5 mJ
0.0mJ 20A 40A 60A
0.0 mJ
5
15
25
35
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=12, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)
7.5mJ
*) E on and E ts include losses due to diode recovery E ts *
*) Eon and Ets include losses due to diode recovery 10.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5.0mJ
7.5mJ Ets* 5.0mJ
Eon*
E off
E on* 2.5mJ
Eoff 2.5mJ
0.0mJ 0C 50C 100C 150C
0.0mJ 400V
500V
600V
700V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=40A, RG=12, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
15V
Ciss
VGE, GATE-EMITTER VOLTAGE
10V
960V
c, CAPACITANCE
240V
1nF
Coss
5V
100pF
Crss
0V
0nC
50nC
100nC
150nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V 18V
300A
10s
200A
5s
100A
tSC,
0s
0A
12V
14V
16V
18V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ 175C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj,start = 175C)
Power Semiconductors
9
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
VCE, COLLECTOR-EMITTER VOLTAGE
VCE
IC, COLLECTOR CURRENT
600V 60A
60A 600V
400V
40A
40A
IC
400V
200V
20A
20A
200V
0V
IC
0us 0.4us 0.8us 1.2us
VCE
0A
0A 0us 0.4us 0.8us 1.2us 0V
t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=12, Tj = 175C, Dynamic test circuit in Figure E)
t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=12, Tj = 175C, Dynamic test circuit in Figure E)
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 10 K/W
-1
ZthJC, TRANSIENT THERMAL RESISTANCE
0.2 10 K/W
-1
0.2 0.1 0.05
R,(K/W) 0.064 0.074 0.162 0.010
0.1 0.05
10 K/W
-2
, (s) 3.67*10-4 3.92*10-3 1.92*10-2 3.40*10-1
R2
0.02 0.01 single pulse 10 K/W
-2
R,(K/W) 0.112 0.163 0.234 0.015
, (s) 2.80*10-4 3.27*10-3 1.71*10-2 2.68*10-1
R2
0.02 0.01
R1
R1
single pulse
C1=1/R1 C2=2/R2
C1= 1/R1
C2= 2/R2
10 K/W 10s
-3
100s
1ms
10ms
100ms
10 K/W 10s
-3
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
10
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
600ns 500ns
8C
Qrr, REVERSE RECOVERY CHARGE
TJ=175C
6C
trr, REVERSE RECOVERY TIME
TJ=175C
400ns 300ns 200ns 100ns 0ns 400A/s
4C
TJ=25C
TJ=25C
2C
800A/s
1200A/s
1600A/s
0C 400A/s
800A/s
1200A/s
1600A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)
-1000A/s
40A
TJ=25C
dirr/dt, DIODE PEAK RATE OF FALL
35A 30A 25A 20A 15A 10A 5A 0A
OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
TJ=175C TJ=25C
-800A/s
TJ=175C
-600A/s
-400A/s
Irr,
-200A/s
400A/s
800A/s
1200A/s
1600A/s
-0A/s 400A/s
800A/s
1200A/s
1600A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)
Power Semiconductors
11
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
150A TJ = 25C
2.5V IF=80A
125A
100A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
175C
2.0V 40A 1.5V 20A 8A
75A
50A
1.0V
25A
0.5V
0A
0V
1V
2V
3V
0.0V
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
12
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
13
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit .
Power Semiconductors
14
Rev. 2.2
Sep 08
TrenchStop 2
(R)
nd
IKW40N120T2
Generation Series
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
15
Rev. 2.2
Sep 08

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