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| N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA42 T stg Tj PC VCBO VCEO HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Storage Temperature - Junction Temperature - - - - Collector Dissipation- Collector-Base Voltage- Collector-Emitter Voltage- Emitter-Base Voltage Collector Current - - --- - - - ---- -- - - - - Ta=25ae(c) -55~150ae 150ae 625mW 300V 300V - 6V 500mA TO-92 1D Emitter E 2D Base B 3D Collector C V EB O IC ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Collector Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO ICES HFE HFE HFE 1(c) 2(c) 3(c) 300 300 5 100 100 1 25 40 40 |I V V V nA nA A IC=100|I IE=100|I A, IE=0 A IC=0 IC=1mA, IB=0 VCB=200V, IE=0 VEB=3V, IC=0 VCE=300V, VBE=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA DC Current Gain VCE(sat1) VCE(sat2) VBE(sat1) Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product 50 0.5 1 0.9 V V V MHz IC=20mA, IB=2mA IC=60mA, IB=6mA IC=20mA, IB=2mA VCE=20V, IC=10mA F=100MHz fT |
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