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 2DD2652
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
* * * * * * * Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Low Power Amplification and Switching Complementary PNP Type Available (2DB1689) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2)
Mechanical Data
* * * * * * * * Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value 15 12 6 1.5 3 Unit V V V A A
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25C Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 300 417 500 250 -55 to +150 Unit mW C/W mW C/W C
Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Cobo fT Min 15 12 6 270 Typ 80 11 260 Max 0.1 0.1 200 680 Unit V V V A A mV pF MHz Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 15V, IE = 0 VEB = 6V, IC = 0 IC = 500mA, IB = 25mA VCE = 2V, IC = 200mA VCB = 10V, IE = 0, f = 1MHz VCE = 2V, IC = 100mA, f = 100MHz
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product
Notes: 1. 2. 3. 4. 5.
No purposefully added lead. Diode's Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2DD2652
Document number: DS31633 Rev. 2 - 2
1 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated
2DD2652
0.6
1.8 1.6
PD, POWER DISSIPATION (W)
0.5
IC, COLLECTOR CURRENT (A)
1.4 1.2 1.0 0.8
IB = 5mA IB = 4mA IB = 3mA
0.4
NEW PRODUCT
0.3
(Note 4)
0.2
IB = 2mA
(Note 3)
0.6 0.4 0.2
IB = 1mA
0.1
0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 25
0 0 0.5 1 1.5 2 2.5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 3
1,000
T A = 150C
1
IC/IB = 20
T A = 25C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
TA = 85C
hFE, DC CURRENT GAIN
TA = -55C
0.1
TA = 150C T A = 85C TA = 25C
100
0.01
TA = -55C
VCE = 2V
10 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 0.1
0.001 0.1
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
VCE = 2V
1.2
IC/IB = 20
1.0
1.0
0.8
T A = -55C
0.8
T A = -55C
0.6
TA = 25C
0.6
T A = 25C TA = 85C
0.4
T A = 85C
0.4
TA = 150C
0.2
TA = 150C
0.2 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
0 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
2DD2652
Document number: DS31633 Rev. 2 - 2
2 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated
2DD2652
1,000
f = 1MHz
CAPACITANCE (pF)
100
NEW PRODUCT
Cibo
10
Cobo
1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
Ordering Information
Part Number 2DD2652-7
Notes:
(Note 6) Case SOT-323 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
RN2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
RN2
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
Package Outline Dimensions
A
BC
G H K M
J
D
L
SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0 8 All Dimensions in mm
2DD2652
Document number: DS31633 Rev. 2 - 2
3 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated
2DD2652 Suggested Pad Layout
Y Z
NEW PRODUCT
C
Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
2DD2652
Document number: DS31633 Rev. 2 - 2
4 of 4 www.diodes.com
December 2008
(c) Diodes Incorporated


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