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| 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 7.25 13.1 3.0 1.0 1.24 9.0 0.78 5.08 2.7 (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions Applications Switching LPTL 8.9 4.8 Packaging specifications Package Type Code Basic ordering unit (pieces) Taping LPTS LPTL 1000 TL TLL (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum temperature allowed Inner circuit Limits 600 30 Unit V V A A A A A mJ W C C (1) (1) Gate (2) Drain (3) Source Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg 3 1 3 1 2 2 12 48 12 48 6 9.6 100 150 -55 to +150 1 (2) (3) 1 Body Diode Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.04 - Rev.A 1.2 2.54 0.4 R6012ANJ Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Data Sheet Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min. - 600 - 2.5 - 3.5 - - - - - - - - - - Typ. - - - - 0.32 - 1300 890 45 30 30 90 35 35 7 15 Max. 100 - 100 4.5 0.42 - - - - - - - - - - - Unit nA V A V S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=10V ID=6A, VDS=10V VDS=25V VGS=0V f=1MHz ID=6A, VDD 300V VGS=10V RL=50 RG=10 VDD 300V ID=12A VGS=10V RL=25 / RG=10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.5 Unit V Conditions IS=12A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.04 - Rev.A R6012ANJ Electrical characteristics curves 100 40 20 8.0V DRAIN CURRENT: ID (A) Ta= 25C Pulsed Data Sheet 10V 9.0V 7.0V Ta= 25C Pulsed 8.0V 7.0V 10V DRAIN CURRENT : ID (A) DRAIN CURRENT: ID (A) 10 30 15 1 Operation in this area is limited by RDS(ON) Tc = 25C Single Pulse 1 PW =100us PW=1ms DC operation 20 6.5V 10 6.5V 6.0V 5.0V 5.5V 0.1 10 6.0V 5.0V VGS= 4.5V 5 VGS= 4.5V 0.01 0.1 0 10 100 1000 0 10 20 30 40 50 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3: Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2: Typical Output Characteristics() 100 GATE THRESHOLD VOLTAGE: VGS(th) (V) 5 4 3 2 1 0 -50 DRAIN CURRENT : ID (A) 10 Ta= 125C Ta= 75C Ta= 25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS= 10V Pulsed 6 VDS= 10V ID = 1mA 10 VGS= 10V Pulsed 1 1 0.1 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 0.01 0.1 1 10 100 0.01 0 1 2 3 4 5 6 7 0 50 100 150 0.01 0.001 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics CHANNEL TEMPERATURE: Tc h (C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0.8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () Ta=25C Pulsed 0.8 VGS= 10V Pulsed 100 VDS= 10V Pulsed 0.6 ID =12A 0.4 0.6 ID = 12A 0.4 ID = 6A 0.2 10 1 Ta= -25C Ta= 25C Ta= 75C Ta= 125C 0.1 0.2 ID =6A 0.01 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0 -50 0 50 100 150 0.001 0.001 0.01 0.1 1 10 100 CHANNEL TEMPERATURE: Tch (C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.04 - Rev.A R6012ANJ 100 REVERSE DRAIN CURRENT : IDR (A) VGS= 0V Pulsed CAPACITANCE : C (pF) Ta= 125C Ta= 75C 1 Ta= 25C Ta= -25C 10000 GATE-SOURCE VOLTAGE : VGS (V) 15 Ta= 25C VDD = 300V ID = 12A RG= 10 10 Pulsed Data Sheet 10 1000 Cos s 100 Cis s Crs s 5 0.1 10 Ta= 25C f= 1MHz VGS= 0V 0.1 1 10 100 1000 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 0 0 10 20 30 40 50 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000 REVERSE RECOVERY TIME: trr (ns) 10000 tf SWITCHING TIME : t (ns) 1000 td(off) 100 Ta= 25C VDD = 300V VGS= 10V R G= 10 Pulsed 100 10 0.1 1 Ta= 25C di / dt= 100A / s VGS= 0V Pulsed 10 100 10 tr 1 0.01 0.1 1 10 100 td(on) REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current DRAIN CURRENT : ID (A) Fig.14 SwitchingCharacteristics 10 NORMARIZED TRANSIENT THERMAL 1 RESISTANCE : r (t) Ta = 25C Single Pulse : 1Unit Rthch-at = txRthch-a Rthch-a = 53.0 C/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.04 - Rev.A R6012ANJ Measurement circuits Data Sheet Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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