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LMN400E01
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
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General Description
LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete NMOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device.
6 5 4
NEW PRODUCT
1 2 3
Features
* * * * * * Voltage Controlled Small Signal Switch N-MOSFET with ESD Gate Protection Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2)
Fig. 1: SOT-363
C_Q1
6
B_Q1
5
S_Q2
4
C
Mechanical Data
* * * * * * * * Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate)
Q1 PNP
DDTB122LU R2 B 220 E R1 10K
S DMN601TK G Q2 NMOS D
1
2
3
E_Q1
G_Q2
D_Q2
Fig 2: Schematic and Pin Configuration Sub-Component P/N DDTB122LU_DIE DMN601TK_DIE (ESD Protected) Reference Q1 Q2 Device Type PNP Transistor N-MOSFET R1(NOM) 10K R2(NOM) 220 Figure 2 2
Maximum Ratings, Total Device
Characteristic Power Dissipation Power Derating Factor above 37.5C Output Current
@TA = 25C unless otherwise specified Symbol (Note 3) PD Pder Iout Value 200 1.6 400 Unit mW mW/C mA
Thermal Characteristics
Characteristic
@TA = 25C unless otherwise specified Symbol Tj, TSTG (Note 3) RJA Value -55 to +150 625 Unit C C/W
Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to one heated junction of PNP transistor)
Notes:
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO Vcc Vin IC
@TA = 25C unless otherwise specified Value -50 -50 -50 +5 to -6 -400 Unit V V V V mA
NEW PRODUCT
Sub-Component Device: ESD Protected N-Channel MOSFET (Q2)
Characteristic Drain-Source Voltage Drain Gate Voltage (RGS 1M Ohm) Gate-Source Voltage
@TA = 25C unless otherwise specified Symbol VDSS VDGR VGSS ID IS Value 60 60 +/-20 +/-40 300 800 300 Unit V V V mA mA
Continuous Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Continuous Source Current
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO VI(OFF) VOH IO(OFF) Min -50 -50 -4.9 70 70 -3 0.154 7 36 Typ -0.55 220 225 -1.5 -0.1 -18 -1.2 -1.9 0.22 10 45 200 20 Max -100 -500 -1 -0.3 -500 -0.15 -0.3 -0.5 -0.6 1.125 -0.3 -28 -1.4 -2.2 0.286 13 55
@TA = 25C unless otherwise specified Unit nA nA mA V V V V nA V V V V V V mA V V K K MHz pF Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 IC = -10uA, IE = 0 IC = -2mA, IB = 0 VCE = -5V, IC = -100uA VCC = -5V, VB = -0.05V, RL = 1K VCC = -50V, VI = 0V IC = -10mA, IB = -0.3mA = -200mA, IB = -20mA IC = -400mA, IB= -40mA IC = -500mA, IB = -50mA IC = -400mA, IB = -40mA VCE = -5V, IC = -50mA VCE = -5V, IC = -400mA VO = -0.3V, IC = -20mA Io/II = -50mA /-2.5mA VI = -5V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA
IC
VCE(SAT)
Equivalent on-resistance DC Current Gain Input On Voltage Output Voltage (Equivalent to VCE(SAT)) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor (Base), +/- 30% Pull-up Resistor (Base to Vcc supply), +/- 30% Resistor Ratio (Input Resistor/Pullup resistor) SMALL SIGNAL CHARACTERISTICS Transition Frequency (Gain Bandwidth Product) Collector capacitance, (Ccbo-Output Capacitance)
Notes:
RCE(SAT) hFE VI(ON) VO(ON) II VBE(ON) VBE(SAT) R2 R1 R1/R2 fT CC
VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz
4. Short duration pulse test used to minimize self-heating effect.
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Electrical Characteristics: ESD Protected N-Channel MOSFET (Q2)
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVdss Zero Gate Voltage Drain Current (Drain Leakage Current) Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Turn-Off Delay Time
@TA = 25C unless otherwise specified Min 60 1 500 80 Typ 1.6 0.09 0.6 1.6 1.2 260 Max 1 10 -10 2.5 1.5 3.75 3 2 50 25 5 20 40 Unit V A A A V V mA mS pF pF pF ns ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm VGS = 0V, IS = 300 mA* VDS = -25V, VGS = 0V, f = 1MHz Test Condition VGS = 0V, ID = 10uA VGS = 0V, VDS = 60V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, VDS 2*VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS 2*VDS(ON), ID = 200 mA
Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) VDS(on) ID(on) RDS(on) gFS Ciss Coss Crss td(on) td(off)
NEW PRODUCT
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current VSD IS ISM 0.88 1.5 300 800 V mA mA
Typical Characteristics
250
500
lb = 8mA lb = 7mA T A = 25C lb = 6mA lb = 5mA lb = 4mA
450
PD, POWER DISSIPATION (mW)
IC, COLLECTOR CURRENT (mA)
lb = 9mA
200
400 350 300
lb = 10mA
lb = 3mA
150
lb = 2mA
250 200 150 100 50
lb = 1mA
100
50
0 0 50 75 150 100 125 25 TA, AMBIENT TEMPERATURE (C) Fig. 3 Max Power Dissipation vs. Ambient Temperature 175
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 4 Output Current vs. Voltage Drop (Pass Element PNP)
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Pre-Biased PNP Transistor Characteristics
IC/IB = 10
VCE(SAT), COLLECTOR VOLTAGE (V)
NEW PRODUCT
T A = -55 C TA = 25C TA = 85C
TA = 125C T A = 150C
VCE(SAT), COLLECTOR VOLTAGE (V)
IC/IB = 20
TA =-55 C TA = 125C TA = 150C TA = 25C TA = 85C
IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC @ IC/IB = 10
IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC @ IC/IB = 20
VBE(SAT), BASE EMITTER VOLTAGE (V)
IC/IB = 10
TA = -55 C T A = 150C TA = 125C TA = 25C T A = 85C
VBE(ON), BASE EMITTER VOLTAGE (V)
IC/IB = 10 VCE = 5V
T A = 125C TA = 150C
TA = -55 C T A = 25C TA = 85C
IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC @ IC/IB = 10
IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC @ VCE = 5V
VCE = 5V
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC @ VCE = 5V
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Typical N-Channel MOSFET (ESD Protected) Characteristics
VDS = 10V TA = 150C TA = 125C T A = -55C T A = 25C T A = 85C
ID, DRAIN CURRENT (A)
1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics
VDS = VGS VDS = 10V ID = 1mA Pulsed
NEW PRODUCT
5
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE Fig. 11 Transfer Characteristics 10
VGS = 10V Pulsed
2
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
1.5
TA = 125 C TA = 150 C
TA = 85C
1
1
TA = -55C TA = 25C TA = 0C TA = -25C
0.5
0 -50 -25 75 100 125 0 25 50 Tj, JUNCTION TEMPERATURE (C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature
VGS = 5V Pulsed
0.1
150
ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current
10
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 0
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
T A = 125C TA = 150 C
TA = 85 C
TA = -55C TA = 0C
TA = 25C
TA = -25C
1 ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current
VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN400E01
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ID = 300mA
IDR, REVERSE DRAIN CURRENT (A)
VGS = 10V Pulsed
VGS = 0V Pulsed
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
ID = 150mA
T A = 150C
TA = 125C TA = 85C TA = 25 C
NEW PRODUCT
T A = 0C TA = -25C
TA = -55 C
0 Tj, JUNCTION TEMPERATURE (C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature
IS, REVERSE DRAIN CURRENT (A)
VGS = 10V
gFS, FORWARD TRANSCONDUCTANCE (mS)
TA= 25C Pulsed
TA = -25 C TA = -55 C
TA = 25C
T A = 150C
TA = 125 C
TA = 85C
VGS = 0V
1
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Application Details
PNP Transistor (DDTB122LU) and ESD Protected N-MOSFET (DMN601TK) integrated as one in LMN400E01 can be used as a discrete entity for general application or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig. 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400 mA. The MOSFET Switch draws no current, hence loading of control circuitry is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 21 for one example of a typical application circuit used in conjunction with a voltage regulator as a part of power management system).
DDTB122LU VIN
E Q1 B
C PNP
VOUT
R1 10K
LOAD
NEW PRODUCT
R2
220 Q2 D
DMN601TK
S
N-MOSFET
Control
G
Fig. 20 Circuit Diagram
Typical Application Circuit
5VSupply U1 U3 Vin U2 Vin 1
Load Switch Point of Load
IN OUT
Control Logic Circuit (PIC, Comparator etc)
E_Q1 G_Q2 D_Q2
C_Q1 B_Q1 S_Q2
6 5
Vout
OUT1
Control 2 3
4 GND
GND
LMN400E01 Diodes Inc.
Voltage Regulator
Fig. 21
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Ordering Information
Device LMN400E01-7
Notes: 5.
(Note 5) Packaging SOT-363 Shipping 3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
PM5 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September
PM5
Fig. 22 2006 T Jan 1 Feb 2 2007 U Mar 3
Date Code Key Year Code Month Code
YM
2008 V Apr 4
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
May 5
Mechanical Details
A
BC
H K M
J
D
F
L
Fig. 23
SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 8 0 All Dimensions in mm
Suggested Pad Layout:
E E
Z
G
C
Figure 24 Dimensions Z G X Y C E
Value (mm) 2.5 1.3 0.42 0.6 1.9 0.65
Y X
Fig. 24
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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