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4V Drive Pch MOSFET RRR040P03 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSMT3 Features 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3). 3) 4V drive. (3) (1) (2) Abbreviated symbol : UG Application Switching Packaging specifications Package Code Basic ordering unit (pieces) RRR040P03 Type Taping TL 3000 Inner circuit (3) 2 (1) 1 Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 4 Unit V V A A A A W C C (1) Gate (2) Source (3) Drain (2) 1 ESD PROTECTION DIODE 2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 16 0.8 16 1.0 150 55 to +150 *1 *2 Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 125 Unit C / W www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RRR040P03 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 2.7 Typ. 32 45 52 1000 150 130 15 30 85 45 10.5 3.0 3.3 Max. 10 1 2.5 45 63 72 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=4A, VGS=10V m ID=2A, VGS=4.5V ID=2A, VGS=4.0V ID=4A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2A, VDD 15V VGS=10V RL=7.5 RG=10 ID=4A, VDD 15V VGS=5V RL=3.8 RG=10 Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=4A, VGS=0V www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.04 - Rev.A RRR040P03 Electrical characteristics curves 4 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.8V 2 Ta=25C Pulsed DRAIN CURRENT : -ID[A] 4 DRAIN CURRENT : -ID[A] Ta=25C VGS= -2.8V Pulsed 3 VGS= -10V VGS= -4.5V VGS=-4.0V VGS=-3.0V 100 10 VDS= -10V Pulsed Data Sheet DRAIN CURRENT : -ID[A] 3 2 Ta= 125C Ta= 75C 1 Ta= 25C Ta= - 25C 0.1 0.01 0.001 1 VGS= -2.5V 1 VGS= -2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 1 2 3 4 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Ta=25C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1000 1000 VGS= -10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 VGS= -4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( ) 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] VGS= -4.0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VDS= -10V Pulsed SOURCE CURRENT : -Is [A] 1000 10 10 VGS=0V Pulsed 1 100 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0 0.5 1 1.5 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( ) 10 0.1 0.01 0.1 1 10 0.01 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.04 - Rev.A RRR040P03 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 150 ID= -2.0A 100 1000 td(off) tf GATE-SOURCE VOLTAGE : -VGS [V] SWITCHING TIME : t [ns] Ta=25C Pulsed 10000 ID= -4.0A Ta=25C VDD= -15V VGS= -10V RG=10 Pulsed 8 6 100 td(on) 10 tr 4 50 2 Ta=25C VDD= -15V ID= -4.0A RG=10 Pulsed 0 5 10 15 0 0 5 10 15 1 0.01 0.1 1 10 0 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ta=25C f=1MHz VGS=0V Ciss 1000 100 Crss Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.04 - Rev.A RRR040P03 Measurement circuits Pulse Width Data Sheet ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching Waveforms VG ID VGS RL VDS Qg VGS IG(Const.) D.U.T. Qgs VDD Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 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More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2010 ROHM Co., Ltd. All rights reserved. R1010A |
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