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| RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD PACKAGE DIMENSIONS 0.126 (3.2) 0.110 (2.8) 0.043 (1.1) 0.035 (0.9) FRONT 0.020 (0.50) 0.087 (2.2) 0.071 (1.8) 0.087 (2.2) 0.071 (1.8) 0.039 (1.0) TOP 0.035 (0.9) R0.017 (0.4) 2 1 COLLECTOR MARK BACK 0.016 (0.4) SCHEMATIC 2 COLLECTOR NOTE: 1. Emitter 2. Collector 3. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. 4. Dimensions for all drawings are in inches (mm). 1 EMITTER DESCRIPTION QTLP610CPD is a phototransistor in miniature SMD package molded in a water clear plastic with right angle lens. FEATURES * * * * * * * * NPN Silicon Phototransistor Right Angle Surface Mount Package Matched Emitters: QTLP610CIR Available in 0.315" (8mm) width tape on 7" (178mm) diameter reel; 2,000 units per reel High Photo Sensitivity Low Junction Capacitance Fast Response Time Water Clear Lens (c) 2005 Fairchild Semiconductor Corporation Page 1 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) Notes: 1. At 25C or below. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100s, T = 10 ms. Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -25 to +85 -40 to +90 240 for 5 sec 260 for 10 sec 30 5 75 Unit C C C C V V mW ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C) PARAMETER Peak Sensitivity Wavelength Reception Angle Dark Current VCE = 20 V, Ee = 0 Collector-Emitter Breakdown IC = 100A, Ee = 0 Emitter-Collector Breakdown IE = 100A, Ee = 0 On-State Collector Current Saturation Voltage Rise Time Fall Time Ee = 1 mW/cm2 VCE = 5V Ee = 1 mW/cm2 IC = 2mA VCE = 5V, RL = 1000 IC = 1mA TEST CONDITIONS (P = 940nm) SYMBOL PS ID BVCEO BVECO IC(ON) VCE(SAT) tr tf MIN. -- -- -- 30 5 0.1 -- -- -- TYP. 860 80 -- -- -- 0.5 -- 15 15 MAX. -- -- 100 -- -- -- 0.4 -- -- UNITS nm Deg. nA V V mA V s s (c) 2005 Fairchild Semiconductor Corporation Page 2 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD TYPICAL PERFORMANCE CURVES Fig. 1 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) 100 106 5 Fig. 2 Collector Dark Current vs. Ambient Temperature Collector Dark Current (A) 80 2 107 5 2 108 5 2 109 5 2 60 40 20 0 -25 1010 0 25 50 75 85 100 0 25 50 75 100 Ambient Temperature TA (C) Ambient Temperature TA (C) Fig. 3 Relative Collector Current vs. Ambient Temperature 160 140 VCE = 5 V Ee=1 mW/cm2 4.0 3.5 Fig. 4 Collector Current vs. Irradiance VCE = 5 V Ta = 25C Relative Collector Current (%) Collector Current IC (mA) 120 100 80 60 40 20 0 -25 -10 0 10 20 30 40 50 60 70 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 Ambient Temperature TA (C) Irradiance Ee (mW/cm2) Fig. 5 Spectral Sensitivity 1.0 3.5 3 Fig. 6 Collector Current vs. Collector-Emitter Voltage Relative Spectral Sensitivity Collector Current IC (mA) 0.8 2.0 2 1.5 1 0.5 H=2.0mW/cm2 0.6 H=1.5mW/cm2 0.4 H=1.0mW/cm2 0.2 H=0.5mW/cm2 0 300 500 700 900 11000 1300 0 0 1 2 3 4 Wavelength (nm) Collector-Emitter Voltage VCE (V) (c) 2005 Fairchild Semiconductor Corporation Page 3 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD RECOMMENDED PRINTED CIRCUIT BOARD PATTERN 0.035 (0.90) 0.035 (0.90) 0.008 (0.20) 0.008 (0.20) 0.059 (1.50) 0.059 (1.50) 0.035 (0.90) 0.035 (0.90) Light Emitting Direction 0.079 (2.00) 0.079 (2.00) 0.197 (5.00) 0.197 (5.00) Mounting Example RECOMMENDED IR REFLOW SOLDERING PROFILE 5 sec MAX soldering time 240 C MAX +5 C/s MAX -5 C/s MAX 60 - 120 sec Preheating 120 - 150 C MAX (c) 2005 Fairchild Semiconductor Corporation Page 4 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD TAPE AND REEL DIMENSIONS 8.4 +1.5 -0.0 11.0 5 0. 2.5 +0.5 -0.0 O12.75 +0.25 -0.0 Progressive direction 1.75 2.00.05 4.0 O1.55.05 0.230.1 3.50.05 1 2.5 0 0.5 O62.00.5 8.0 O1801 2 1 Emitter 2 Collector 4.0 2.06 Dimensional tolerance is 0.1mm unless otherwise specified Angle: 0.5 Unit: mm 3.20 1.32 (c) 2005 Fairchild Semiconductor Corporation Page 5 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED EMITTING DIODE QTLP610CPD DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2005 Fairchild Semiconductor Corporation Page 6 of 6 4/11/05 |
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