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| LSF811C1 Infrared Emitting Diode RELATIVE POWER OUTPUT(%) High-output Power Compact High Reliability APPLICATIONS Optical Switches Optical Sensors Medical Application FEATURES Anode @ Cathode Dimensions (Unit:mm) A SPECTRAL OUTPUT 120 100 80 60 40 20 0 710 810 910 WAVELENGTH(nm) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25*Z) ITEM SYMBOL RATINGS 60 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP 5 Reverse Voltage VR 120 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 100 Junction Temp. Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body UNIT mA A V mW *Z *Z *Z *Z To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com LSF811C1 Infrared Emitting Diode RELATIVE POWER vs FORWARD FORWARD I-V CHARACTERISTICS RADIATION PATTERN CURRENT 400 120 80 350 70 100 300 60 80 250 50 60 200 40 150 30 40 20 100 20 10 50 0 0 0 -90 -60 -30 0 30 60 90 0 1 2 3 0 20 40 60 80 BEAM ANGLE(deg.) FORWARD VOLTAGE(V) FORWARD CURRENT(mA) FORWARD VOLTAGE vs TEMPERATURE THERMAL DERATING CURVE POWER OUTPUT vs TEMPERATURE IF=10mA IF=10mA 1.6 80 140 70 120 1.5 60 100 1.4 50 80 1.3 40 60 30 1.2 40 20 1.1 20 10 1 0 0 -30 0 30 60 90 -30 0 30 60 90 -30 0 30 60 90 AMBIENT TEMPERATURE(*Z) AMBIENT TEMPERATURE(*Z) AMBIENT TEMPERATURE(*Z) FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) 910 FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25*Z ) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength Ep IF=20mA Spectral Line Half Width E IF=20mA Half Intensity Beam Angle AE IF=20mA IFP=50mA Rise Time Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T IF=10mA Temp. Coefficient of VF V/T FORWARD CURRENT(mA) MIN TYP 6.5 1.4 810 30 25 *| *| 60 -0.6 -2.0 MAX UNIT mW 1.9 V 100 EA nm nm deg. nS nS pF %/*Z mV/*Z |
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