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PD-96288
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
* * * * * * * * Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH35UDPbF IRG7PH35UD-EP
C
VCES = 1200V I NOMINAL = 20A
G E
TJ(max) = 150C
Benefits
* High efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses * Rugged transient performance for increased reliability * Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.9V
C
Applications
* * * * U.P.S. Welding Solar Inverter Induction Heating
GC E TO-247AC IRG7PH35UDPbF
GC E TO-247AD IRG7PH35UD-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C INOMINAL ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Max.
1200 50 25 20 60 80 50 25 80 30 180 70 -55 to +150
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
V W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
f
Min.
--- --- --- ---
Typ.
--- --- 0.24 40
Max.
0.70 0.65 --- ---
Units
C/W
1
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02/08/10
IRG7PH35UDPbF/IRG7PH35UD-EP
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
1200 -- -- -- 3.0 -- -- -- -- -- -- --
Typ.
-- 1.2 1.9 2.3 -- -16 22 2.0 2000 2.8 2.5 --
Max.
-- -- 2.2 -- 6.0 -- -- 100 -- 3.6 -- 100
Units
V V/C V V S A V nA
Conditions
VGE = 0V, IC = 250A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
VGE = 0V, IC = 1mA (25C-150C) IC = 20A, VGE = 15V, TJ = 25C IC = 20A, VGE = 15V, TJ = 150C VCE = VGE, IC = 600A VCE = 50V, IC = 20A, PW = 30s VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150C IF = 20A IF = 20A, TJ = 150C VGE = 30V
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
mV/C VCE = VGE, IC = 600A (25C - 150C)
gfe ICES VFM IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
85 15 35 1060 620 1680 30 15 160 80 1750 1120 2870 30 15 190 210 1940 120 40
Max.
130 20 50 1300 850 2150 50 30 180 105 -- -- -- -- -- -- -- -- -- --
Units
IC = 20A nC VGE = 15V VCC = 600V
Conditions
IC = 20A, VCC = 600V, VGE = 15V J RG = 10, L = 200uH, LS = 150nH, TJ = 25C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 600V, VGE = 15V ns RG = 10, L = 200uH, LS = 150nH, TJ = 25C
IC = 20A, VCC = 600V, VGE=15V J RG=10, L=200uH, LS=150nH, TJ = 150C IC = 20A, VCC = 600V, VGE = 15V ns RG = 10, L = 200uH, LS = 150nH TJ = 150C pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150C, IC = 80A VCC = 960V, Vp =1200V Rg = 10, VGE = +20V to 0V
eA
Energy losses include tail & diode reverse recovery
FULL SQUARE -- -- -- 790 105 40 -- -- -- J ns A
TJ = 150C VCC = 600V, IF = 20A VGE = 15V, Rg = 10, L =1.0mH, Ls = 150nH
Notes: VCC = 80% (VCES), VGE = 20V, RG = 50. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C.
2
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IRG7PH35UDPbF/IRG7PH35UD-EP
45 40 35
Load Current ( A )
30 25 20
Square Wave: VCC
For both: Duty cycle : 50% Tj = 150C Tc = 100C Gate drive as specified Power Dissipation = 70W
I
15 10 5 0 0.1 1 f , Frequency ( kHz ) 10 100
Diode as specified
Fig. 1 - Typical Load Current vs. Frequency
60 50 40
IC (A)
150
(Load Current = IRMS of fundamental)
200
30 20 10 0 25 50 75 100 125 150
Ptot (W)
100
50
0 0 20 40 60 80 100 120 140 160 T C (C)
T C (C)
Fig. 2 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 3- Power Dissipation vs. Case Temperature
1000
100 10sec
100
IC (A)
10
IC (A)
1
DC
100sec 1msec
10
0.1
Tc = 25C Tj = 150C Single Pulse
0.01 1 10 100 VCE (V) 1000 10000
1 10 100 VCE (V) 1000 10000
Fig. 4 - Forward SOA TC = 25C, TJ 150C; VGE =15V
Fig. 5 - Reverse Bias SOA TJ = 150C; VGE = 20V
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3
IRG7PH35UDPbF/IRG7PH35UD-EP
80 70 60 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 70 60 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
ICE (A)
40 30 20 10 0 0 2 4 6 8 10
40 30 20 10 0 0 2 4 6
8
10
Fig. 6- Typ. IGBT Output Characteristics TJ = -40C; tp = 30s
80 70 60 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
IF (A)
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s
80 70 60 50 40 30 20 10 0 -40C 25C 150C
ICE (A)
40 30 20 10 0 0 2 4 6 8 10
0
1
2
3 VF (V)
4
5
6
VCE (V)
Fig. 8 - Typ. IGBT Output Characteristics TJ = 150C; tp = 30s
8 7 6
VCE (V)
Fig. 9 - Typ. Diode Forward Characteristics tp = 380s
8 7 6
VCE (V)
5 4 3 2 1 4 8
ICE = 10A ICE = 20A ICE = 40A
5 4 3 2 1
ICE = 10A ICE = 20A ICE = 40A
12 VGE (V)
16
20
5
10 VGE (V)
15
20
Fig. 10 - Typical VCE vs. VGE TJ = -40C
Fig. 11 - Typical VCE vs. VGE TJ = 25C
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IRG7PH35UDPbF/IRG7PH35UD-EP
8 7 6
VCE (V)
IC, Collector-to-Emitter Current (A)
80 70 60 50 40 30 20 10 0 T J = 25C TJ = 150C
5 4 3 2 1 5 10
ICE = 10A ICE = 20A ICE = 40A
15 VGE (V)
20
4
5
6
7
8
9
10
VGE, Gate-to-Emitter Voltage (V)
4000
Fig. 12 - Typical VCE vs. VGE TJ = 150C
Fig. 13 - Typ. Transfer Characteristics VCE = 50V, tp = 30s
1000 tdOFF
3000
Swiching Time (ns)
Energy (J)
EON 2000 EOFF 1000
100
tF
tdON 10 tR
0 0 10 20 IC (A) 30 40
1 0 10 20 IC (A) 30 40
Fig. 14 - Typ. Energy Loss vs. IC TJ = 150C; L = 680H; VCE = 600V, RG = 10; VGE = 15V
3500 3000
Fig. 15 - Typ. Switching Time vs. IC TJ = 150C; L = 680H; VCE = 600V, RG = 10; VGE = 15V
10000
Swiching Time (ns)
2500
EON
1000
td OFF
Energy (J)
2000 1500 1000 500 0 20 40 60 80 100 RG () EOFF
100 tdON tR 0 20 40
tF
10
60
80
100
RG ()
Fig. 16 - Typ. Energy Loss vs. RG TJ = 150C; L = 680H; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG TJ = 150C; L = 680H; VCE = 600V, ICE = 20A; VGE = 15V
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IRG7PH35UDPbF/IRG7PH35UD-EP
60 RG = 5.0 50 45 40 50
IRR (A)
IRR (A)
40
RG = 10 RG = 47 RG = 100
35 30 25 20
30
20
10 10 15 20 25 IF (A) 30 35 40
0
20
40
60
80
100
RG ()
Fig. 18 - Typ. Diode IRR vs. IF TJ = 150C
55 50 45
6000 5000
Fig. 19 - Typ. Diode IRR vs. RG TJ = 150C
40A 4000
QRR (C)
5.0 10
IRR (A)
40 35 30 25 20 200 400 600 800 1000 1200 1400 1600 diF /dt (A/s)
3000 2000 1000 0 0 100
47
20A
10A
200 400 600 800 10001200140016001800 diF /dt (A/s)
Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 20A; TJ = 150C
2000 RG = 5.0 1500 RG = 10 RG = 47 RG = 100 1000
Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150C
VGE(th) , Gate Threshold Voltage (Normalized)
5.0 IC = 600A 4.0
Energy (J)
3.0
500
2.0
0 10 15 20 25 IF (A) 30 35 40
1.0 25 50 75 100 125 150 175 T J , Temperature (C)
Fig. 22 - Typ. Diode ERR vs. IF TJ = 150C
Fig. 23 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature
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IRG7PH35UDPbF/IRG7PH35UD-EP
10000
16
VGE, Gate-to-Emitter Voltage (V)
14 12 10 8 6 4 2 0
Cies
VCES = 600V VCES = 400V
Capacitance (pF)
1000
100
Coes
Cres 10 0 100 200 300 VCE (V) 400 500 600
0
20
40
60
80
100
Q G, Total Gate Charge (nC)
Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1 D = 0.50
Thermal Response ( Z thJC )
Fig. 24 - Typical Gate Charge vs. VGE ICE = 20A; L = 2.4mH
0.20 0.1 0.10 0.05 0.02 0.01 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.017 0.218 0.299 0.177
i (sec)
0.000013 0.000141 0.002184
SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006
Ci= i/Ri Ci i/Ri
0.013107 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1 D = 0.50
Thermal Response ( Z thJC )
t1 , Rectangular Pulse Duration (sec)
0.1
0.20 0.10 0.05 0.02 0.01
J J 1
0.01
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.015 0.235 0.281 0.130
i (sec)
0.000043 0.000408 0.003593 0.020382
1
2
3
4
0.001 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRG7PH35UDPbF/IRG7PH35UD-EP
L
L
0
DUT 1K
VCC
80 V +
-
DUT Rg
VCC
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp / DUT L
Fig.C.T.2 - RBSOA Circuit
R=
VCC ICM
-5V DUT / DRIVER Rg VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C force
100K D1 DUT
0.0075F
22K
C sense
G force
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
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IRG7PH35UDPbF/IRG7PH35UD-EP
800 700 600 500 VCE (V) 400 300 200 100 0 -100 -0.5
Eoff Loss 5% ICE 5% V CE 90% ICE
40 tf 35 30 25 VCE (V) ICE (A) 20 15 10 5 0 -5 1.5 2
800 700 600 500 400 300 200 100 0 -100 -0.3 Eon Loss -0.1 0.1 time (s) 0.3 0.5
10% test current 5% V CE 90% test current
80 tr
TEST CURRENT
70 60 50 ICE (A) 40 30 20 10 0 -10
0
0.5
1
time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
30 20 10 0 VF (V) -10 -20 -30 -40 -50 -0.25
Peak IRR 10% Peak IRR
EREC t RR
-0.05
0.15 time (S)
0.35
0.55
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
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IRG7PH35UDPbF/IRG7PH35UD-EP
Dimensions are shown in millimeters (inches)
TO-247AC Package Outline
TO-247AC Part Marking Information
@Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S
,5)3(
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH35UDPbF/IRG7PH35UD-EP
Dimensions are shown in millimeters (inches)
TO-247AD Package Outline
TO-247AD Part Marking Information
@Y6HQG@) UCDTADTA6IADSBQ"7 !F9@ XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
A"$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SAA2A! X@@FA"$ GDI@AC
TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2010
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