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SD2932
RF power transistors HF/VHF/UHF N-channel MOSFETs
Features

Gold metallization Excellent thermal stability Common source configuration, push-pull POUT = 300 W min. with 15 dB gain @ 175 MHz
Description
The SD2932 is a gold metallized N-channel MOS field-effect RF power transistor. The device is intended for use in 50 V DC large signal applications up to 250 MHz. Figure 1.
M244 Epoxy sealed
Pin connection
1 3 2
1 3 2
1. Drain 2. Gate
3. Source
Table 1.
Device summary
Marking SD2932 Package M244 Packaging Tube
Order code SD2932
March 2010
Doc ID 6876 Rev 8
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Contents
SD2932
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 4
Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Typical performance (175 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 6 7 8 9 10 11 12
Test circuit 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit photomaster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Typical broadband data (175 - 230 MHz) . . . . . . . . . . . . . . . . . . . . . . . . 13 Test circuit 175 - 230 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Typical broadband data (88 -108 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . 16 Test circuit 88 - 108 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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SD2932
Electrical data
1
1.1
Electrical data
Maximum ratings
Table 2.
Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG
Absolute maximum ratings (TCASE = 25C)
Parameter Drain source voltage Drain-gate voltage (RGS = 1M) Gate-source voltage Drain current Power dissipation Max. operating junction temperature Storage temperature Value 125 125 20 40 500 +200 -65 to +150 Unit V V V A W C C
1.2
Thermal data
Table 3.
Symbol Rthj-c
Thermal data
Parameter Junction - case thermal resistance Value 0.35 Unit C/W
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Electrical characteristics
SD2932
2
Electrical characteristics
TCASE = +25 oC
2.1
Static
Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS VGS
(1)
Static (per section)
Test conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10A ID = 5 A ID = 250 mA VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 480 190 18 5 200 1.5 Min 125 50 250 4 3 Typ Max Unit V A nA V V mho mV pF pF pF
CISS COSS CRSS
1. Absolute VGS difference between side 1 and side 2 of the device
2.2
Dynamic
Table 5.
Symbol POUT GPS hD VDD = 50 V
Dynamic
Test conditions IDQ = 500 mA f = 175 MHz Min 300 15 50 5:1 16 60 Typ Max Unit W dB % VSWR
VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz
VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz Load mismatch All phase angles
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SD2932
Impedance data
3
Impedance data
Figure 2. Impedance data
D
ZDL
Typical Input Impedance
Typical Drain Load Impedance
G Zin
S
Table 6.
Impedance data
Freq 175 MHz ZIN () 0.92 - j 0.14 ZDL () 3.17 + j 4.34
Note:
Measured Gate to Gate and Drain to Drain, respectively.
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Typical performances
SD2932
4
Figure 3.
Typical performances
Maximum thermal resistance vs case temperature Figure 4. Gate voltage vs case temperature
0.42
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.15 1.1
Id=10 A Id=9 A Id=5 A Id=7 A
Rth(j-c) (C/W)
0.4
1.05
Id=11 A
0.38
1 0.95
Id=4 A
0.36
0.9
Id=2 A Id=.1 A
Id=1 A
0.34 25 30 35 40 45 50 55 60 65 70 75 80 85 Tc, CASE TEMPERATURE (C)
0.85
Id=.25 A
0.8 -25 0 25 50 75 100
Tcase, CASE TEMPERATURE (C)
Figure 5.
Capacitance vs drain-source voltage
Figure 6.
Drain current vs gate voltage
10000
20
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
Vds=10 V
T=-20 C T=+25 C
15
1000
Ciss Coss
10
T=+80 C
100
5
Crss
10 0 10 20 30 40 50
0 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
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SD2932 Figure 7. Maximum safe operating area
Typical performances
Figure 8.
Transient thermal impedance
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Typical performances Figure 9. Transient thermal model
SD2932
4.1
Typical performance (175 MHz)
Figure 11. Output power vs input power
Figure 10. Output power vs input power
600
600
Vdd=50 V
Pout, OUTPUT POWER (W)
500 400 300 200 100 0 0 2 4 6 8 10 12 14 16
Vdd=50V Idq=2 x 250mA F=175Mhz
Pout, OUTPUT POWER (W)
T=-20 C
500 400
T=+25 C
Vdd=40 V
T=+80 C
300 200 100 0
Vdd=50V Idq=2 x 250mA F=175Mhz
18
20
22
0
2
4
6
8
10
12
14
16
18
20
22
Pin, INPUT POWER (W)
Pin, INPUT POWER(W)
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SD2932
Typical performances
Figure 12. Power gain vs output power
Figure 13. Efficiency vs output power
18
80 70
Gp, POWER GAIN (dB)
17 16 15 14 13 12 11 10 0 100 200 300 400 500
Vdd=50V Idq=2 x 250mA F=175Mhz
Nc, EFFICIENCY (%)
60 50 40 30 20 10 0 100 200 300 400 500
Vdd=50V Idq=2 x 250mA F=175Mhz
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Table 7.
Output power vs supply voltage
Figure 14. Output power vs gate voltage
450
400
Pin=15.6 W
Pout,OUTPUT POWER (W)
400 350 300 250 200 150 100 24
Pout, OUTPUT POWER (W)
Idq=2 x 250mA F=175Mhz
T=+25 C
300
T=-20 C T=+80 C
Pin=7.8 W
200
100
Pin=3.9 W
Vdd=50V Idq=2 x 250mA F=175Mhz
26
28
30
32
34
36
38
40
42
44
46
48
50
0 -3 -2 -1 0 1 2 3
Vdd,DRAIN VOLTAGE (V)
VGS, GATE_SOURCE VOLTAGE (V)
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Test circuit 175 MHz
SD2932
5
Test circuit 175 MHz
Figure 15. 175 MHz test circuit schematic (production test circuit
NOTES: 1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINES IS + 0.002{0.05} - O.OOO[0.00] TYP
REF. 1022256B
Table 8.
175 MHz test circuit component part list
Description 470 Ohm 1 W, surface mount chip resistor 360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent 560 Ohm 2 W, resistor two turn wire air-wound axial lead resistor 20 K Ohm 3.09 W, 10 turn wirewound precision potentiometer 680 pF ATC 130B surface mount ceramic chip capacitor
Component R1,R2,R5,R6 R3,R4 R7,R8 R9,R10 C1,C4
C2,C3,C7,C8,C17,C19, 10000 pF ATC 200B surface mount ceramic chip capacitor C20,C21 C5 C6 C9,C10 C11,C12, C13 C14,C15,C24,C25 C16,C18 75 pF ATC 100B surface mount ceramic chip capacitor ST40 25 pF - 115 pF miniature variable trimmer 47 pF ATC 100B surface mount ceramic chip capacitor 43 pF ATC 100B surface mount ceramic chip capacitor 1200 pF ATC 700B surface mount ceramic chip capacitor 470 pF ATC 700B surface mount ceramic chip capacitor
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SD2932 Table 8. 175 MHz test circuit component part list (continued)
Description 0.1 F / 500 V surface mount ceramic chip capacitor 0.01 F / 500 V surface mount ceramic chip capacitor 10 F / 63 aluminum eletrolytic axial lead capacitor
Test circuit 175 MHz
Component C22,C23 C26,C27 C28 B1 B2 T1 T2 L1 FB1,FB5 FB2,FB6 FB3 FB4 PCB
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4 Turns thru Fair-rite Bead 50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable R.F. Transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] flexible coaxial cable 2 turns thru fair-rite multi-aperture core R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58] L = 5.90[149.86] Inductor 1/4 Wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible coaxial cable 2 turns thru fair-rite bead Shield bead Multi-aperture core Multilayer ferrite chip bead (surface mount) Surface mount emi shield bead Woven Glass Reinforced PTFE Microwave Laminate 0.06", 1 oz EDCu, Both sides, r = 2.55
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Test circuit photomaster
SD2932
6
Test circuit photomaster
Figure 16. 175 MHz test circuit photomaster
8.50 inches
Figure 17. 175 MHz test fixture
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4 inches
SD2932
Typical broadband data (175 - 230 MHz)
7
Typical broadband data (175 - 230 MHz)
Figure 19. Power gain vs frequency
Figure 18. Input power vs frequency
12
18
Pin , INPUT POWER (W)
10 8 6 4 2 160
Gp , POWER GAIN (dB)
17 16 15 14 13 12 11 10 160 170
Vdd = 50V Idq = 300 mA Pout = 250W
Vdd = 50V Idq = 300 mA Pout = 250W
180 190 200 210 220 230 240
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 20. Efficiency vs frequency
Figure 21. Return loss vs frequency
Nd , DRAIN EFFICIENCY (%)
80 75 70 65 60 55 50 45 160 170 180 190 200 210 220 230 240
0
RTL , RETURN LOSS (dB)
Vdd = 50V Idq = 300 mA Pout = 250W
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 160
Vdd = 50V Idq = 300 mA Pout = 250W
170 180 190 200 210 220 230 240
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 22. 1 dB compression point vs frequency
P1dB , 1dB COMPRESSION (W)
350
325
300
275
Vdd = 50V Idq = 300 mA
170 180 190 200 210 220 230 240
250 160
FREQUENCY (MHz)
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Test circuit 175 - 230 MHz
SD2932
8
Test circuit 175 - 230 MHz
Figure 23. 175 - 230 MHz test circuit layout (engineering fixture)
Table 9.
175 - 230 MHz circuit layout component part list
Description 1/32" woven fiberglass 0.030 Cu, sides, r = 4.8 50 Ohm flexible coax cable OD 0.06", 3" long. ferrite Core NEOSIDE 9:1transformer, 16.5 Ohm flexible coax cable 0.1", 3" Long 4:1 transformer, 25 Ohm flexible coax cable OD 0.06", 5" Long 8.2 pF ceramic cap 100 pF ceramic cap 2 - 18 pF chip cap 47 pF ceramic cap 47 nF ceramic cap 56 pF ATC chip cap 470 pF ATC chip cap 100 nF ceramic cap 2 x 330 nF / 50 V cap 10 nF / 63 V electrolityc cap 47 Ohm resistor 6.8 K Ohm chip resistor
Component PCB T1 T2,T3 T4,T5 C1 C2,C3 C4 C5 C6,C11 C7 C8,C9,C13 C10 C12 C14 R1,R3 R2
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SD2932 Table 9.
Test circuit 175 - 230 MHz 175 - 230 MHz circuit layout component part list (continued)
Description 4.7 K Ohm multi turns trim resistor 8.2 K Ohm / 5 W resistor 3.3 K Ohm / 5 W resistor 6.8 V Zener diode 20 nH Inductor 70 nH Inductor 30 nH Inductor 10 nH Inductor 15 nH Inductor
Component R4 R5 R6 D1 L1 L2 L3 L4 L5
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Typical broadband data (88 -108 MHz)
SD2932
9
Typical broadband data (88 -108 MHz)
Figure 25. Power gain vs frequency
Figure 24. Input power vs frequency
4
22
Pin , INPUT POWER (W)
Gp , POWER GAIN (dB)
3.5
Vdd = 50V Idq = 200 mA Pout = 300W
21 20 19 18 17 16
3
Vdd = 50V Idq = 200 mA Pout = 300W
2.5 85 90 95 100 105 110
85
90
95
100
105
110
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 26. Efficiency vs frequency
Figure 27. Return loss vs frequency
80
0
RTL , RETURN LOSS (dB)
78
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 85 90 95 100 105 110
Nd , EFFICIENCY (%)
76 74 72 70 68 66 64 62 60 85 90 95 100 105 110
Vdd = 50V Idq = 200 mA Pout = 300W
Vdd = 50V Idq = 200 mA Pout = 300W
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 28. 2nd harmonic vs. frequency (88 - 108 MHz)
Figure 29. 3rd harmonic vs frequency (88 - 108 MHz)
-10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 90 95 100
Vdd = 50V Idq = 200 mA Pout = 300W
-10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 90 95 100
H2 , 2nd HARMONIC (dBc)
H3 , 3rd HARMONIC (dBc)
Vdd = 50V Idq = 200 mA Pout = 300W
105
110
105
110
FREQUENCY (MHz)
FREQUENCY (MHz)
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SD2932
Test circuit 88 - 108 MHz
10
Test circuit 88 - 108 MHz
Figure 30. 88 - 108 MHz test circuit layout (engineering fixture)
Table 10.
175 - 230 MHz circuit layout component part list
Description 1/32" woven fiberglass 0.030 Cu, 2 sides, r = 4.8 50 Ohm flexible coax cable OD 0.06", 5" Long 9:1 transformer, 25 Ohm flexible coax cable OD 0.1", 3.9". ferrite core NEOSIDE 4:1 transformer, 25 Ohm flexible coax cable OD 0.1", 5" Long 50 Ohm flexible coax cable OD 0.1", 5" long vk200 10 pF ceramic cap 1 nF chip cap 1 nF ATC chip cap 470 pF ATC chip cap 100 nF chip cap 100 mF / 63 V electrolityc cap 56 Ohm resistor 10 Ohm chip resistor 10 K Ohm resistor 5.6 Ohm resistor
Component PCB T1 T2,T3 T4,T5 T6 FB1 C1 C2,C3,C4,C7,C8 C5,C6 C9 C10 C11 R1 R2,R4 R3 R5
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Test circuit 88 - 108 MHz Table 10. 175 - 230 MHz circuit layout component part list (continued)
Description 10 K Ohm, 10 turn trim resistor 3.3 K Ohm / 5 W resistor 15 Ohm / 5 W resistor 6.6 V Zener diode 10 nH inductor 40 nH inductor 70 nH inductor
SD2932
Component R6 R7 R8 D1 L1 L2 L3
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SD2932
Package mechanical data
11
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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Package mechanical data Table 11.
Dim. Min A B C D E F G H I J K L M N 33.91 0.10 1.52 2.59 4.83 10.03 21.59 3.02 9.65 19.81 10.92 27.94 34.16 0.15 1.78 2.84 5.84 10.34 22.10 1.335 0.004 0.060 0.102 0.190 0.395 0.850 5.59 5.08 3.28 9.91 20.82 11.18 0.119 0.380 0.780 0.430 1.100 Typ Max 5.84 Min 0.220 0.200 Typ
SD2932
M244 (.400 x .860 4/L BAL N/HERM W/FLG) mechanical data
mm. Inch Max 0.230
0.129 0.390 0.820 0.440
1.345 0.006 0.070 0.112 0.230 0.407 0.870
Figure 31. Package dimensions
Controlling Dimension: Inches
1020876B
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SD2932
Revision history
12
Revision history
Table 12.
Date 15-Jul-2004 24-Jan-2006 23-Nov-2009 31-Mar-2010
Document revision history
Revision 5 6 7 8 Updated Table 4: Static (per section). Inserted VGS in Table 4: Static (per section). Added Figure 7, Figure 8 and Figure 9. Changes
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SD2932
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