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PD - 97518
IRF9328PBF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = -10V)
-30 11.9 19.7 18 -12
V
6 ' ' ' '
m m nC A
6 6 *
RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25C)
SO-8
Applications
* Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features Resulting Benefits
Industry-Standard SO8 Package
Multi-Vendor Compatibility Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number IRF9328PBF IRF9328TRPbF
Package Type SO8 SO8
Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel
Note
Absolute Maxim um Ratings
Parameter
V DS V GS I D @ TA = 25C I D @ TA = 70C I DM P D @TA = 25C P D @TA = 70C TJ T STG Drain-to-S ource Voltage Gate-to-Source Voltage Conti nuous Drain Current, VGS @ 10V Conti nuous Drain Current, VGS @ 10V Pul sed Drain Current Power Dissipation Power Dissipation
Max.
-30 20 -12 -9.6 -96 2.5 1.6 0.02 -55 to + 150
Units
V
Linear Derating Factor Operating Juncti on and Storage Temperature Range
f f
c
A
W W/C C
Notes through are on page 2
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1
5/26/10
IRF9328PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge
Min. Typ. Max. Units
-30 --- --- --- -1.3 --- --- --- --- --- 20 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 10 16.1 -1.8 -5.8 --- --- --- --- --- 18 35 5.3 8.5 15 19 57 80 66 1680 350 220 --- --- 11.9 19.7 -2.4 --- -1.0 -150 -100 100 --- --- 52 --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF ns nC V
Conditions
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA VGS = -10V, ID = -12A m VGS = -4.5V, ID = -9.6A
e e
V mV/C A nA S nC
VDS = VGS, ID = -25A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -9.6A VDS = -15V, VGS = -4.5V, ID = - 9.6A VGS = -10V VDS = -15V ID = -9.6A VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8 See Figs. 20a &20b VGS = 0V VDS = -25V = 1.0kHz Max. 120 -9.6 Units mJ A
h h
Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance
h
h h
Turn-On Delay Time
e
Reverse Transfer Capacitance Parameter
Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
Parameter
IS ISM VSD trr Qrr
d
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 51 35 -2.5 A -96 -1.2 76 53 Typ. --- --- V ns nC showing the
Conditions
MOSFET symbol integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100A/s Max. 20 50
G S D
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
TJ = 25C, IF = -2.5A, VDD = -24V
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient
e
f
g
Units
C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 2.6mH, RG = 25, IAS = -9.6A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing.
2
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IRF9328PBF
100 100
-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)
10
TOP
1
BOTTOM
VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
10
TOP
1
-2.5V
BOTTOM
VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V
0.1 -2.5V 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) 60s PULSE WIDTH Tj = 25C
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance (Normalized)
-ID, Drain-to-Source Current (A)
10
1.4
ID = -12A V GS = -10V
TJ = 150C
1
1.2
TJ = 25C
0.1
1.0
V DS = -10V 60s PULSE WIDTH
0.01 1.0 2.0 3.0 4.0 5.0 6.0
0.8
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = C ds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
14
-V GS, Gate-to-Source Voltage (V)
12 10 8 6 4 2 0
ID= -9.6A
V DS= -24V V DS= -15V V DS= -6.0V
C, Capacitance(pF)
Ciss 1000 Coss Crss
100 1 10 -V DS, Drain-to-Source Voltage (V) 100
0
8
16
24
32
40
48
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9328PBF
100 1000 OPERATION IN THIS AREA LIMITED BY R (on) DS TJ = 150C 10
-ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A)
100 1msec 10 10msec
1
TJ = 25C
1
V GS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 -V SD, Source-to-Drain Voltage (V) 0.1 0.1
TA = 25C Tj = 150C Single Pulse 1
DC 10 100
-V DS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
12 10
-ID, Drain Current (A) -V GS(th) , Gate threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
8 6 4 2 0 25 50 75 100 125 150 TA , Ambient Temperature (C)
2.0
ID = -25A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
100
Thermal Response ( Z thJA ) C/W
Fig 10. Threshold Voltage vs. Temperature
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
1
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1 10 100
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9328PBF
RDS(on), Drain-to -Source On Resistance (m )
ID = -12A 40
RDS(on), Drain-to -Source On Resistance ( m)
50
60 50 40 30 20 10 V GS = -10V 0 0 10 20 30 40 50 60 -ID, Drain Current (A) V GS = -4.5V
30
20
TJ = 125C
10 TJ = 25C 0 0 5 10 15 20 -V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
500
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical On-Resistance vs. Drain Current
1000
400
300
Single Pulse Power (W)
ID TOP -2.3A -3.3A BOTTOM -9.6A
800
600
200
400
100
200
0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C)
0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Typical Power vs. Time
D.U.T *
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
*
Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
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Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs
5
IRF9328PBF
Id Vds Vgs
L
0
DUT
20K 1K
S S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
VDS
L
I AS
RG
-V GS -20V
D.U.T
IAS
DRIVER
0.01
VDD A
tp
tp V(BR)DSS
15V
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
VDS VGS RG
RD
td(on) tr t d(off) tf
D.U.T.
VGS 10%
+
-VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 20a. Switching Time Test Circuit
6
-
V DD
90% VDS
Fig 20b. Switching Time Waveforms
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IRF9328PBF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
9 6 ' & ! % " $
7
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9328PBF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information
Qualification level
Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D)
Moisture Sensitivity Level RoHS Compliant

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.5/2010
8
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