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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM4804JPT CURRENT 7.9 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM4804JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 20 7.9 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 24 2000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM4804JPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=6.3A VGS=4.5V, ID=5A 1 16 24 7 3 20 V m 30 S Forward Transconductance VDS =15V, ID = 6A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=10V, ID=3.5A VGS=10V V DD= 10V ID = 1.0A , VGS = 10 V RGEN= 6 28 4 7.5 22 34 43 18 35 nC ton 45 70 90 35 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 2.0 1.3 A V Drain-Source Diode Forward Voltage IS = 2.0A , VGS = 0 V |
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