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DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 3kV "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
* * * * * * * *
SOT-523
NEW PRODUCT
Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.002 grams (approximate)
Drain
D
Gate
Gate Protection Diode
G
Source
S
ESD PROTECTED TO 3kV
TOP VIEW
Equivalent Circuit
TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID IDM Value -20 6 -0.46 -0.33 -6 Units V V A A
Characteristic
Steady State
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 0.27 461 -55 to +150 Units W C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG1013T
Document number: DS31784 Rev. 4 - 2
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October 2009
(c) Diodes Incorporated
DMG1013T
Electrical Characteristics
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf Min -20 -0.5 Typ 0.5 0.7 1.0 0.9 -0.8 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 Max -100 2.0 -1.0 0.7 0.9 1.3 -1.2 Unit V nA A V S V pF pF pF pC pC pC ns ns ns ns Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -350mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47, RG = 10, ID = -200mA
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage
NEW PRODUCT
Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
-
4. Short duration pulse test used to minimize self-heating effect.
1.5
VGS = -8.0V
10
1.2 -ID, DRAIN CURRENT (A)
VGS = -3.0V
8 -ID, DRAIN CURRENT (A)
VGS = -4.5V
VDS = -5V
0.9
VGS = -2.5V VGS = -2.0V
6
0.6
4
0.3
VGS = -1.5V VGS = -1.2V
2
T A = 150C T A = 125C TA = 85C T A = 25C TA = -55C
0 0 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1 5
0 0
0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
3
DMG1013T
Document number: DS31784 Rev. 4 - 2
2 of 6 www.diodes.com
October 2009
(c) Diodes Incorporated
DMG1013T
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6 1.4 1.2 1.0 0.8
VGS = -2.5V VGS = -1.8V
1.0
VGS = -4.5V
0.8
TA = 150C
0.6
TA = 125C T A = 85C TA = 25C
0.6 0.4 0.2 0 0 0.3 0.6 0.9 1.2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.5
VGS = -4.5V
0.4
TA = -55C
NEW PRODUCT
0.2
0 0 0.6 0.9 1.2 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.3 1.5
1.7 1.5
VGS = -2.5V ID = -500mA
1.2
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE ()
1.3
0.8
VGS = -2.5V ID = -500mA
1.1
VGS = -4.5V ID = -1.0A
0.6
0.9
0.4
VGS = -4.5V ID = -1.0A
0.7 0.5 -50
0.2
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
10
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
1.6 -VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
-IS, SOURCE CURRENT (A)
8
6
T A = 25C
0.8
ID = -250A
ID = -1mA
4
0.4
2
0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0 0.2
0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
1.2
DMG1013T
Document number: DS31784 Rev. 4 - 2
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October 2009
(c) Diodes Incorporated
DMG1013T
100
Ciss f = 1MHz
1,000
TA = 150C
-IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
100
TA = 125C
10
Coss
Crss
10
NEW PRODUCT
T A = 85C
TA = 25C
1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
1
20
0
4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V)
20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 504C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response
Ordering Information
Part Number DMG1013T-7
Notes:
(Note 5) Case SOT-523 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)
PA1
YM
Date Code Key Year Code Month Code
2009 W Jan 1 Feb 2
2010 X Mar 3 Apr 4
2011 Y May 5 Jun 6
2012 Z Jul 7
2013 A Aug 8 Sep 9
2014 B Oct O Nov N
2015 C Dec D October 2009
(c) Diodes Incorporated
DMG1013T
Document number: DS31784 Rev. 4 - 2
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DMG1013T
Package Outline Dimensions
A
BC
NEW PRODUCT
G H K M
N
J
D
L
SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7
X
E
DMG1013T
Document number: DS31784 Rev. 4 - 2
5 of 6 www.diodes.com
October 2009
(c) Diodes Incorporated
DMG1013T
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
NEW PRODUCT
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMG1013T
Document number: DS31784 Rev. 4 - 2
6 of 6 www.diodes.com
October 2009
(c) Diodes Incorporated

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