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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU808 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) *High Switching Speed APPLICATIONS *Designed for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature VALUE 1500 700 5 12 20 8 12 160 150 -65~150 UNIT V V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.78 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU808 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;IB= 0; L=25 mH B 700 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 9A; IB= 4A B 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 6A 3 V VBE(sat) Base-Emitter Saturation Voltage IC= 9A; IB= 4A B 1.5 1 4 10 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125 VEB= 5V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1A; VCE= 5V 8 IS/B Second Breakdown Current VCE= 100V; tp= 1 s 0.4 A COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 200 pF fT Current-Gain--Bandwidth Product IC= 0.1A ; VCE= 5V, ftest= 5MHz 7 MHz Switching Times ton Turn-On Time 1.5 s ts Storage Time IC= 9A; IB1= -IB2= 4A 4.5 s tf Fall Time 0.5 s isc Websitewww.iscsemi.cn 2 |
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