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APTCV50H60T3G Full - Bridge NPT & Trench + Field Stop(R) IGBT Power module Trench & Field Stop(R) IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80C CoolMOSTM Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25C 13 Q1 CR1 18 19 22 23 Q2 14 Q3 CR3 11 10 7 8 Q4 4 3 Application * Solar converter Features * Q2, Q4 CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated * Q1, Q3 Trench & Field Stop IGBT(R) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current * * * * 16 15 26 27 29 15 30 NTC 31 32 16 Top switches : Trench + Field Stop IGBT(R) Bottom switches : CoolMOSTM 28 27 26 25 29 30 23 22 20 19 18 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant * * * * 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 www.microsemi.com 1-9 APTCV50H60T3G - Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com June, 2007 APTCV50H60T3G All ratings @ Tj = 25C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT(R) characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 80 50 100 20 176 100A @ 550V Unit V A V W Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 50A Tj = 25C RG = 8.2 Tj = 150C Min Typ 3150 200 95 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 0.85 Max Unit pF ns ns mJ June, 2007 2-9 APTCV50H60T3G - Rev 0 mJ C/W www.microsemi.com APTCV50H60T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/s Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 30 1.8 2.1 1.5 25 160 35 480 2.3 V Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance ns nC 1.2 C/W 2. Bottom switches 2.1 Bottom CoolMOSTM characteristics Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 49 38 130 20 45 290 15 3 1900 Unit V A V m W A mJ Tc = 25C Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25C Tj = 125C 2.1 Typ www.microsemi.com 3-9 APTCV50H60T3G - Rev 0 June, 2007 VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V 40 3 Max 250 500 45 3.9 100 Unit A m V nA APTCV50H60T3G Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff RthJC Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 49A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 49A RG = 4.7 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 49A ; RG = 4.7 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 49A ; RG = 4.7 Min Typ 7.2 0.29 150 34 51 21 30 100 45 675 520 1100 635 Max Unit nF nC ns J J 0.5 C/W 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 2500 -40 -40 -40 2.5 Typ Max 150* 125 100 4.7 110 Unit V C N.m g Tj=175C for Trench & Field Stop IGBT June, 2007 www.microsemi.com 4-9 APTCV50H60T3G - Rev 0 APTCV50H60T3G 5. SP3 Package outline (dimensions in mm) 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com 6. Top switches curves 6.1 Top Trench + Field Stop IGBT(R) typical performance curves Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 150C VGE=19V 100 TJ=25C 80 IC (A) TJ=125C IC (A) 60 40 20 0 0 0.5 1 TJ=25C TJ=150C 1.5 VCE (V) 2 2.5 3 100 80 60 40 20 0 5 Transfert Characteristics 3.5 TJ=25C IC (A) 2 1.5 1 TJ=125C TJ=150C TJ=25C 0 11 12 0 20 40 IC (A) 60 80 100 6 7 8 9 10 VGE (V) www.microsemi.com 5-9 APTCV50H60T3G - Rev 0 0.5 Eon June, 2007 E (mJ) 17 12 28 80 VGE=13V 60 VGE=15V 40 20 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 VGE=9V Energy losses vs Collector Current 3 2.5 VCE = 300V VGE = 15V RG = 8.2 TJ = 150C Eoff APTCV50H60T3G Switching Energy Losses vs Gate Resistance 3 2.5 2 E (mJ) 1.5 1 0.5 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 Eon Eoff Reverse Bias Safe Operating Area 125 100 IC (A) 75 50 25 0 0 100 200 300 400 VCE (V) 500 600 700 VGE=15V TJ=150C RG=8.2 VCE = 300V VGE =15V IC = 50A TJ = 150C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds 6.2 Top Fast diode typical performance curves Forw ard Current vs Forw ard Voltage 120 IF, Forward Current (A) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 T J=25C T J=-55C T J=1 25C 2.5 3.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 6-9 APTCV50H60T3G - Rev 0 June, 2007 APTCV50H60T3G 7. Bottom switches curves 7.1 Bottom CoolMOSTM typical performance curves 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 320 ID, Drain Current (A) 280 240 200 160 120 80 40 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 140 ID, Drain Current (A) VGS=20V 5V 4.5V 4V VGS=15&10V Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 TJ=125C TJ=25C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V ID, DC Drain Current (A) 1.25 Normalized to VGS=10V @ 50A VGS=10V DC Drain Current vs Case Temperature 50 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (C) RDS(on) Drain to Source ON Resistance www.microsemi.com 7-9 APTCV50H60T3G - Rev 0 June, 2007 APTCV50H60T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Coss C, Capacitance (pF) 10000 Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS=10V ID= 50A 100 limited by RDSon 100 s 10 Single pulse TJ=150C TC=25C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) VDS=480V ID=50A TJ=25C VDS=120V VDS=300V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8-9 APTCV50H60T3G - Rev 0 June, 2007 APTCV50H60T3G 140 120 td(on) and td(off) (ns) Delay Times vs Current 70 td(off) VDS=400V RG=5 TJ=125C L=100H td(on) Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 tr VDS=400V RG=5 TJ=125C L=100H 100 80 60 40 20 0 0 10 20 30 40 50 tf 60 70 80 0 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 VDS=400V ID=50A TJ=125C L=100H ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 Eoff 0.8 0.4 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 VDS=400V RG=5 TJ=125C L=100H Eon Eoff Eon 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 300 ZVS VDS=400V D=50% RG=5 TJ=125C TC=75C 250 Frequency (kHz) 200 150 100 50 0 5 hard switching ZCS IDR, Reverse Drain Current (A) 100 TJ=150C 10 TJ=25C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APTCV50H60T3G - Rev 0 June, 2007 |
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