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| SMD Type MOS Field Effect Transistor KPA1890 IC IC Features Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A) MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A) MAX. (VGS = -4.5 V, ID = -2.5 A) MAX. (VGS = -4.0 V, ID = -2.5 A) TSSOP-8 Unit: mm 1 :Drain1 5 :Gate2 2, 3 :Source1 6, 7 :Source2 8 :Drain2 Built-in G-S protection diode against ESD 4 :Gate1 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty Cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg N-Channel 30 20 6.0 24 2 150 -55 to +150 P- Channel -30 20 5.0 20 Unit V V A A W *2 Mounted on ceramic substrate of 5000 mm2 X 1.1 mm www.kexin.com.cn 1 SMD Type KPA1890 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Drain to Source On-state Resistance RDS(on)3 RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Testconditons VDS = 30 V, VGS = 0 V VDS = -30V, VGS = 0 V VGS = VGS = 16 V, VDS = 0 V 16 V, VDS = 0 V N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch 1.5 -1.3 3 3 1.8 -1.8 7.6 7.8 18 24 27 28 P- Ch N-Ch P- Ch N-Ch P- Channel VDS = -10 V,VGS = 0 V,f = 1 MHz N-Channel VDD = 15 V, ID = 3.0 A,VGS = 10 V RG = 10 P- Channel VDD = -15 V, ID = -2.5 A,VGS = -10 V RG = 10 N-Channel ID = 6.0 A,VDD = 24 V,VGS = 10 V P- Channel ID = -5.0 A,VDD = -24 V,VGS = -10 V IF = 6. A, VGS = 0 V IF = 5.0 A, VGS = 0 V N-Channel IF = 6 A, VGS = 0 V,di/dt = 100 A/ P- Channel IF = 5 A, VGS = 0 V,di/dt = 100 A/ s s P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch 42 47 748 851 227 279 107 128 20 17 80 52 48 84 30 73 14 15 1.9 1.9 3.8 4.2 0.82 0.83 31 38 32 35 27 37 47 37 56 64 Min Typ Max 10 -10 10 10 2.5 -2.3 IC IC Unit A A V S m m m m m m pF pF pF ns ns ns ns nC nC nC V ns nC VDS = 10 V, ID = 1 mA VDS = -10 V, ID = -1 mA VDS = 10 V, ID = 3.0 A VDS = -10 V, ID = -2.5 A VGS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0A VGS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -2.5 A VGS = -4.0 V, ID = -2.5 A N-Channel VDS = 10 V,VGS = 0 V,f = 1 MHz 2 www.kexin.com.cn |
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