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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508AF DESCRIPTION With TO-220Fa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current (peak) Base current Base current (peak) Total power dissipation Junction temperature Storage temperature SEM GE Open base OND IC TOR UC VALUE 1500 700 7.5 8 15 4 6 UNIT V V V A A A A W ae ae Open collector TC=25ae 35 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508AF CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IE=1mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5A; IB=1.1A IC=4.5A; IB=1.7A VCE=rated;VBE=0 Tj=125ae VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4.5A ; VCE=1V IE=0;f=1MHz;VCB=10V 4.0 13 MIN 7.5 700 1.0 1.1 1.0 2.0 1.0 TYP. 13.5 MAX UNIT V V V V mA mA SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC Collector output capacitance HAN INC SEM GE OND IC TOR UC 5.5 80 7.0 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU1508AF SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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