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GRM32E 54HC0 BU4237F 080CT 0N10E 36MB60A N74F863N 001000
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 PNP BDX45 - BDX46 - BDX47 NPN BDX42 - BDX43- BDX44
SILICON PLANAR DARLINGTON TRANSISTORS
The BDX45, BDX46 and BDX47 are silicon PNP planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary NPN types are the BDX42, BDX43 and BDX44 respectively.
ABSOLUTE MAXIMUM RATINGS Symbol
- VCBO
Collector-Base Voltage
Ratings
BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47
Value
60 80 90 45 60 80 5
Unit
V
- VCER
Collector-EmitterVoltage
V
- VEBO
Emitter-Base Voltage
V
- IC - IC
Collector Current
1
A
2
- ICM - IB PT TJ TS
Base Current
0.1
A Watts
Power Dissipation
@ TC = 25
1.25 150
Junction Temperature
C -65 to +150
Storage Temperature
COMSET SEMICONDUCTORS
1/3
PNP BDX45 - BDX46 - BDX47 NPN BDX42 - BDX43- BDX44
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-mb
Ratings
BDX45 Thermal Resistance, Junction to Ambient BDX46 BDX47 BDX45 Thermal Resistance, Junction to BDX46 Mounting base BDX47
Value
100
Unit
K/W 10
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
- ICES - IEBO
Ratings
Collector cut-off current
Test Condition(s)
VBE = 0 ; -VCE = 45V VBE = 0 ; -VCE = 60V VBE = 0 ; -VCE = 80V IC =0 ; VEB = 4V
Min Typ Mx Unit
1000 1000 1000 2000 2000 2000
Emitter cut-off current
BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 2/3
-
10 10 10 10 10 10 1.3 1.3 1.3 1.6 1.6 1.6 1.3 1.3 1.3 1.8 1.6 1.6 1.9 1.9 1.9 2.2 2.2 2.2 -
A
A
-IC=500 mA, -IB=0.5 mA -IC=1.0 A, -IB=1.0 mA
- VCE(SAT)
Collector-Emitter saturation Voltage (*)
-IC=1.0 A, -IB=4.0 mA -IC=500 mA, -IB=0.5 mA Tj=150 C -IC=1.0 A, -IB=1.0 mA Tj=150 C -IC=1.0 A, -IB=4.0 mA Tj=150 C -IC=500 mA, -IB=0.5 mA
V
- VBE(SAT)
Base-Emitter saturation Voltage (*)
-IC=1.0 A, -IB=1.0 mA -IC=1.0 A, -IB=4.0 mA -VCE=10.0 V, -IC=150 mA
V
hFE
DC Current Gain
-VCE=10.0 V, -IC=500 mA
-
COMSET SEMICONDUCTORS
PNP BDX45 - BDX46 - BDX47 NPN BDX42 - BDX43- BDX44
Symbol
Ratings
Test Condition(s) BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 -IC=500 mA, -IBon= IBoff=0.5 mA BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 -IC=1 A, -IBon= IBoff=1.0 mA BDX45 BDX46 BDX47
-VCE=5.0 V, -IC=500 mA , f=35MHz
Min Typ
-
Mx Unit
-
hfe ton toff ton toff
Small Signal Current Gain
Turn-on time
Turn-off time
Turn-on time
Turn-off time
-
10 10 10 400 400 400 1500 1500 1500 400 400 400 1500 1500 1500
-
ns
ns
MECHANICAL DATA CASE TO-126
DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Emitter Collector Base inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126
COMSET SEMICONDUCTORS
3/3


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