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AOTF409 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electrically identical.
Features
VDS (V) =-60V ID = -24A RDS(ON) < 40m RDS(ON) < 54m (VGS = -10V) (VGS = -10V) (VGS = -4.5V)
- RoHS Compliant - AOTF409L Halogen Free
100% UIS Tested!
TO-220FL
D
G G DS S
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current
C C
Maximum -60 20 -24 -17 -60 -5.4 -4.3 -37 68 43 21 2.16 1.38 -55 to 175
Units V V A
TC=25C TC=100C
C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
TA=25C TA=70C
A A mJ W W C
Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 10 48.5 2.9
Max 12 58 3.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF409
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1969 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 125 72 1 34 VGS=-10V, VDS=-30V, ID=-20A 16 8 5 VGS=-10V, VDS=-30V, RL=1.5, RGEN=3 IF=-20A, dI/dt=500A/s 18 117 Conditions ID=-250A, VGS=0V VDS=-60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A TJ=125C -1.2 -60 33 52.4 43 33 -0.73 -1 -30 2461 178 120 2 43 19.7 10.2 8.9 12 14.5 38 15 25.68 167.12 33 217 2953 231 168 4.0 52 24 12 12.5 40 63 54 -2.1 Min -60 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C.
Rev 0 : Aug-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 -ID (A) 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-3.5V VGS=-3V -10V 30 -6V -5V -4.5V -4V -ID(A) 25 20 15 10 5 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C VDS=-5V
50 45 RDS(ON) (m) 40 35 30 25 20 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) VGS=-10V Normalized On-Resistance VGS=-4.5V
2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=-10V ID=-20A
17 5 2 10 VGS=-4.5V
ID=-20A
100 90 80 RDS(ON) (m) 70 60 50 40 30 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C IS (A) 125C ID=-20A
1.0E+01 1.0E+00
40
1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 10 20 30 40 50 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID=20A 3500 3000 Capacitance (pF) 2500 2000 1500 1000 500 0 0 Crss 10 Coss Ciss
20
30
40
50
60
-VDS (Volts) Figure 8: Capacitance Characteristics
100.0
10s RDS(ON) limited
10s
200 160 Power (W) 120 80 40 0 1E-04 0.001 TJ(Max)=175C TC=25C
100s 1ms
10.0 -ID (Amps)
DC
1.0
10ms
0.1
TJ(Max)=175C TC=25C
17 5 2 10
0.0 0.01
0.1
1
10
100
0.01
0.1
1
10
100
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 1 0.1 0.01 0.001 0.0001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
1000
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
PD Ton
T 10 100
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 -IAR(A) Peak Avalanche Current 120 100 80 60 40 20 0 0.000001 TA=150C TA=125C 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F) TA=100C TA=25C Power Dissipation (W) 40 30 20 10
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
30 25 Current rating -ID(A)
10000
TA=25C
1000
Power (W) 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
100
17 5 2 10
10
1 0 0 0 0.01 0.1 1 10 100 1000 0
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=58C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF409
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
td(on)
Vgs
Rg Vgs
DUT
VDC
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
E AR= 1/2 LIAR
2
Vds
Id
Vgs
Rg DUT Vgs
Vgs
VDC
Diode Recovery Test Circuit & W aveform s
Vds +
Q rr = - Idt
DUT
Vds -
Isd
L
Vgs Ig
VD C
+ Vdd -Vds
Alpha & Omega Semiconductor, Ltd.
+
-
+
-
+
t on tr t d(off) toff tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
Vds
Vds
BVDSS
Vdd
Id
I AR
Vgs
Vgs
t rr
-Isd
-I F
dI/dt
-I RM
Vdd
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