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| 2KG034350JL 2KG034350JL SWITCHING DIODE CHIPS DESCRIPTION O 2KG034350JL is a high speed switching diode chip fabricated in planar technology. O High reverse breakdown voltage rating. O This chip can be encapsulated as MBD3004 switching diode. O This chip has several thicknesses, can suit for different plastic package. The top electrodes material is Al, and the back-side electrodes material is Au. O Chip size: 0.34 X 0.34 (mm2); O Chip Thickness: 15520m or 18020m; 2KG034350JL CHIP TOPOGRAPHY La: Chip Size: 340m; Lb: Pad Size: 180m; MAXIMUM RATINGS (Ta=25C) Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Peak Forward Surge Current@1.0s Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM VR IF IFSM TJ TSTG Value 350 300 225 4.0 150 -65~+150 Unit V V mA A C C ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristics Symbol Test Conditions IF=20mA. Forward Voltage VF IF=100mA. IF=200mA. Reverse Voltage Reverse Current Total Capacitance Reverse Recovery Time VBR IR CT Trr+ IB=100A. VR=240V. f=1MHz; VR=0. IF=IR=30mA, RL=100; measured at IR=3mA. Min. ---350 ---Typ. -------Max. 0.87 1.0 1.25 -100 5.0 50 Unit V V V V nA pF ns HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.01.29 Page 1 of 1 |
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