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| MBR3045 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 operation junction temperature * reverse avalanche behavior Mechanical Data: MBR3045 passivated Silicon Chip Demension(mil) 150x150 Thickness: 350 +- 20 m Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) Reverse Voltage (V): Type MBR3045 30A >45V Chip size(mil) VF(V)@25 C at If=30A VF(V)@125 C at If=30A IRM@VRMM at 25 C 150x150 0,54V 0,47V 0,6mA * expected value for recommended assembling with both side soldering Tipical devise MBR3045 Note: Other voltages & Top Metal AL are available |
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