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| TGL41-6.8 thru TGL41-200A Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors DO-213AB (GL41) SOLDERABLE ENDS 1st BAND 0 D2 = D1 + 0.008 (0.20) - Breakdown Voltage 6.8 to 200V Peak Pulse Power 400W Mounting Pad Layout D2 D1= 0.105 0.095 (2.67) (2.41) 0.157 (4.00) MAX 0.049 (1.25) MIN 0.118 (3.00) MIN 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185(4.7) 1st band denotes type and positive end (cathode) 0.022 (0.56) 0.018 (0.46) Dimensions in inches and (millimeters) 0.256 (6.50) REF Mechanical Data Case: JEDEC DO-213AB molded plastic body over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Polarity: Blue bands denotes the cathode which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.0046 oz., 0.166 g Packaging codes/options: 26/5K per 13" Reel (12mm tape), 60K/box 46/1.5K per 7" Reel (12mm tape), 30K/box Features * Plastic package has Underwriters Laboratory Flammability Classificaion 94V-0 * For surface mounted applications * Glass passivated junction * Excellent clamping capability * Low incremental surge resistance * Very fast response time * 400W peak pulse capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% (200W above 91V) * For devices with V(BR)10V, ID are typically less than 1.0A * High temperature soldering guaranteed: 250C/10 seconds at terminals * Available in unidirectional only Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with a 10/1000s waveform (1)(Fig. 1) Steady state power dissipation at TL = 75C (2) Peak pulse current with a 10/1000s waveform (1) Symbol PPPM PM(AV) (Fig. 3) Value Minimum 400 1.0 See Next Table 40 3.5 -55 to +150 Unit W W A A V C IPPM IFSM VF TJ, TSTG Peak forward surge current, 8.3 ms single half sine-wave unidirectional only(3) Maximum instantaneous forward voltage at 25A for unidirectional only Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2. Rating is 200W above 91V. (2) Mounted on copper pads to each terminal of 0.31 in2 (8.0 mm2) per Fig. 5 (3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum Document Number 88403 03-May-02 www.vishay.com 1 TGL41-6.8 thru TGL41-200A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25C unless otherwise noted) Breakdown Voltage VBR (V)(1) Device Type Min Max Test Current at IT (mA) Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID (A) Maximum Peak Pulse Current IPPM (A)(2) Maximum Maximum Clamping Voltage Temperature at IPPM Coefficient VC (V) of VBR (% / C) TGL41-6.8 TGL41-6.8A TGL41-7.5 TGL41-7.5A TGL41-8.2 TGL41-8.2A TGL41-9.1 TGL41-9.1A TGL41 -10 TGL41 -10A TGL41 -11 TGL41 -11A TGL41-12 TGL41-12A TGL41-13 TGL41-13A TGL41-15 TGL41-15A TGL41-16 TGL41-16A TGL41-18 TGL41-18A TGL41-20 TGL41-20A TGL41-22 TGL41-22A TGL41-24 TGL41-24A TGL41-27 TGL41-27A TGL41-30 TGL41-30A TGL41-33 TGL41-33A TGL41-36 TGL41-36A TGL41-39 TGL41-39A TGL41-43 TGL41-43A 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 1000 1000 500 500 200 200 50.0 50.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 0.060 0.060 0.064 0.064 0.068 0.068 0.071 0.071 0.076 0.076 0.078 0.078 0.081 0.081 0.084 0.084 0.087 0.087 0.089 0.089 0.091 0.091 0.093 0.093 0.095 0.095 0.097 0.097 0.099 0.099 0.100 0.100 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 www.vishay.com 2 Document Number 88403 03-May-02 TGL41-6.8 thru TGL41-200A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25C unless otherwise noted) Breakdown Voltage VBR (V)(1) Device Type Min Max Test Current at IT (mA) Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID (A) Maximum Peak Pulse Current IPPM (A)(2) Maximum Maximum Clamping Voltage Temperature at IPPM Coefficient VC (V) of VBR (% / C) TGL41-47 TGL41-47A TGL41-51 TGL41-51A TGL41-56 TGL41-56A TGL41-62 TGL41-62A TGL41-68 TGL41-68A TGL41-75 TGL41-75A TGL41-82 TGL41-82A TGL41-91 TGL41-91A TGL41-100 TGL41-100A TGL41-110 TGL41-110A TGL41-120 TGL41-120A TGL41-130 TGL41-130A TGL41-150 TGL41-150A TGL41-160 TGL41-160A TGL41-170 TGL41-170A TGL41-180 TGL41-180A TGL41-200 TGL41-200A 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105.0 108.0 114.0 117.0 124.0 135.0 143.0 144.0 152.0 153.0 162.0 162.0 171.0 180.0 190.0 51.7 49.4 56.1 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100.0 95.50 110.0 105.0 121.0 116.0 132.0 126.0 143.0 137.0 165.0 158.0 176.0 168.0 187.0 179.0 198.0 189.0 220.0 210.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102.0 105.0 111.0 121.0 128.0 130.0 136.0 138.0 145.0 146.0 154.0 162.0 171.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.9 6.2 5.4 5.7 5.0 5.2 4.5 4.7 4.1 4.3 3.7 3.9 3.4 3.5 3.1 3.2 1.39 1.46 1.27 1.32 1.16 1.21 1.07 1.12 0.93 0.97 0.87 0.91 0.82 0.85 0.78 0.81 0.70 0.73 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108 103 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.109 0.109 0.109 0.109 0.110 0.110 0.110 0.110 0.110 0.110 0.111 0.111 0.111 0.111 0.111 0.111 0.111 0.111 0.111 0.111 Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent (2) Surge current waveform per Figure 3 and derate per Fig.2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 Document Number 88403 03-May-02 www.vishay.com 3 TGL41-6.8 thru TGL41-200A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve 100 Peak Pulse Power (PPPM) or Current (IPPM) derating in percentage (%) Fig. 2 - Pulse Derating Curve 100 PPPM, Peak Pulse Power (kW) Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10 75 TGL41-6.8 TGL91A 50 1.0 TGL41-100 TGL200A 0.1 0.1s 25 1.0s 10s 100s 1.0ms 10ms 0 0 25 50 75 100 125 150 td, Pulse Width, sec. TA, Ambient Temperature (C) Fig. 3 - Pulse Waveform 150 Fig. 4 - Typical Junction Capacitance 10,000 IPPM -- Peak Pulse Current, % IRSM CJ, Junction Capacitance (pF) tr = 10sec. Peak Value IPPM 100 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM Measured at Zero Bias 1,000 Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. Measured at Stand-off Voltage, VWM 100 td 0 0 1.0 2.0 3.0 4.0 TJ = 25C f = 1.0 MHz Vsq = 50MVpp 10 1.0 10 Unidirectional 100 200 t -- Time (ms) V(BR), Breakdown Voltage (V) 1.00 IFSM, Peak Forward Surge Current (A) Fig. 5 - Steady State Power Derating Curve PM(AV), Steady State Power Dissipation (W) 60 Hz Resistive or Inductive Load 0.75 Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Unidirectional only 50 40 8.3ms single half sine-wave (JEDEC method) TJ = TJ max. 30 0.50 20 0.25 0.31 x 0.31 x 0.08" Copper pads (8 x 8 x 2mm) 0 0 25 50 75 100 125 150 175 200 10 0 1 10 100 TL, Lead Temperature (C) Number of Cycles at 60 Hz www.vishay.com 4 Document Number 88403 03-May-02 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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