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| FDD6796 N-Channel PowerTrench(R) MOSFET May 2008 FDD6796 N-Channel PowerTrench(R) MOSFET 25 V, 40 A, 5.7 m Features Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 A 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D -PA52 TO -2 K (TO -252) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 25 20 40 69 20 100 39 42 3.7 -55 to +175 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.5 40 C/W Package Marking and Ordering Information Device Marking FDD6796 Device FDD6796 Package D-PAK (TO-252) Reel Size 13 '' Tape Width 12 mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDD6796 Rev.C 1 www.fairchildsemi.com FDD6796 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V 25 6.1 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V , ID = 20 A VGS = 4.5 V, ID = 15.5 A VGS = 10 V, ID = 20 A, TJ = 150 C VDS = 5 V, ID = 20 A 1.0 1.9 -6.6 4.6 6.6 6.8 138 5.7 9.0 8.5 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 1740 325 290 0.8 2315 430 435 1.6 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 13 V, ID = 20 A VDD = 13 V, ID = 20 A, VGS = 10 V, RGEN = 6 10 6 23 4 29 15 4.9 6.2 19 11 37 10 41 21 nC nC ns ns ns ns nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 20 A (Note 2) (Note 2) 0.8 0.9 15 3 1.2 1.3 26 10 V ns nC IF = 20 A, di/dt = 100 A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 40 C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: Starting TJ = 25 C, L = 0.1 mH, IAS = 28 A, VDD = 23 V, VGS = 10 V. FDD6796 Rev.C 2 www.fairchildsemi.com FDD6796 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 100 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 VGS = 4.5 V VGS = 4 V VGS = 3.5 V 3.5 VGS = 3 V 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 3.5 V 3.0 2.5 2.0 1.5 VGS = 4.5 V VGS = 4 V 60 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 40 20 VGS = 3 V 1.0 VGS = 10 V 0 0.0 0.5 0 20 40 60 80 100 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 20 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 ID = 20 A VGS = 10 V ID = 20 A PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 15 rDS(on), DRAIN TO 10 TJ = 150 oC 5 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0 V 80 ID, DRAIN CURRENT (A) VDS = 5 V 10 1 0.1 0.01 TJ = 175 oC TJ = 25 oC 60 TJ = 175 oC 40 TJ = 25 oC 20 TJ = -55 oC TJ = -55 oC 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD6796 Rev.C 3 www.fairchildsemi.com FDD6796 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 20 A 5000 Ciss VDD = 13 V CAPACITANCE (pF) 8 1000 6 VDD = 10 V VDD = 16 V Coss 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) Crss 100 50 0.1 f = 1 MHz VGS = 0 V 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 60 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 40 50 40 VGS = 10 V TJ = 25 oC 10 30 Limited by Package VGS = 4.5 V o TJ = 150 oC 20 RJC = 3.5 C/W 10 1 0.01 0.1 1 10 100 0 25 50 75 100 125 o 150 175 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 P(PK), PEAK TRANSIENT POWER (W) 5 10 4 VGS = 10 V SINGLE PULSE RJC = 3.5 oC/W TC = 25 oC 100 us 10 THIS AREA IS LIMITED BY rDS(on) 10 3 1 ms 10 ms 100 ms DC 1 SINGLE PULSE TJ = MAX RATED RJC = 3.5 oC/W TC = 25 oC 10 2 0.1 0.1 1 10 100 10 -6 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD6796 Rev.C 4 www.fairchildsemi.com FDD6796 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJC 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJc + TC 0.01 SINGLE PULSE RJC = 3.5 C/W o 0.001 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 SINGLE PULSE RJA = 96 C/W (Note 1b) o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0 1 0.001 -4 10 10 -3 10 -2 10 10 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDD6796 Rev.C 5 www.fairchildsemi.com FDD6796 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDD6796 Rev. C 6 www.fairchildsemi.com |
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