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| Ordering number : ENA0298 ECH8618 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8618 Features * * * General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 100 20 2 12 1.3 1.5 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 100 1 10 1.2 1.6 2.7 200 230 650 42 29 11.5 4.9 67 23 260 325 2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns Marking : FL Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12506PE MS IM TB-00001933 No. A0298-1/4 ECH8618 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings min typ 13.8 2.1 3 0.80 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7011A-001 Top View 0.25 Electrical Connection 8 7 6 5 2.9 0.15 8 5 0 to 0.02 2.8 2.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 1 2 3 4 0.25 1 0.65 4 0.3 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 Switching Time Test Circuit VIN 10V 0V VIN ID=1A RL=50 VDD=50V D PW=10s D.C.1% VOUT G ECH8618 P.G 50 S No. A0298-2/4 ECH8618 2.0 ID -- VDS 8.0 4 ID -- VGS VDS=10V Drain Current, ID -- A 1.0 Drain Current, ID -- A 1.5 0V 10.0 V 5.0 V 4 .0V V 3.0V 3 1 5. 2 0.5 1 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 25 3.0 C --25 C 3.5 Ta= 7 5C 4.0 Drain-to-Source Voltage, VDS -- V 600 IT10620 600 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT10621 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 500 Static Drain-to-Source On-State Resistance, RDS(on) -- m 500 400 1A 400 300 300 ID=0.5A 200 0 I D= 200 .5 VG A, 0 4 S= V V 1. I D= VG A, 10 S= 100 100 0 0 2 4 6 8 10 12 14 16 18 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID IT10622 7 5 3 2 Ambient Temperature, Ta -- C IT10623 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS=10V 2 7 5 3 2 C 25 0.01 7 5 3 2 0.4 0.6 0.8 1.0 1.2 IT10625 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT10624 0.001 0.2 Drain Current, ID -- A 1000 7 5 SW Time -- ID VDD=50V VGS=10V Ciss, Coss, Crss -- pF 2 1000 7 5 3 2 100 7 5 3 2 10 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 td(off) tf td(on) Ta= 75 C 0 5 10 tr 25 C --25 C 1.0 = Ta --2 C 5 C 75 Source Current, IS -- A 3 1.0 7 5 3 2 0.1 7 5 3 2 Coss Crss 15 20 25 30 IT10627 Drain Current, ID -- A IT10626 Drain-to-Source Voltage, VDS -- V No. A0298-3/4 ECH8618 10 9 VGS -- Qg VDS=50V ID=2A Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=12A 10 10s 0 s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ID=2A 10 1m ms s DC op Operation in this area is limited by RDS(on). era 10 0m tio s n( Ta = 25 C ) 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 1.6 IT10628 PD -- Ta Mounted on a ceramic board (900mm2!0.8mm) Drain-to-Source Voltage, VDS -- V 5 7 100 2 IT10629 Allowable Power Dissipation, PD -- W 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 To t al D 1u iss ip ni t at io n 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10630 Note on usage : Since the ECH8618 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0298-4/4 |
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