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DATA SHEET LS4148
FAST SWITCHING SURFACE MOUNT DIODES
VOLTAGE
100 Volts
POWER
500 mWatts
QUADRO-MELF
Unit : inch (mm)
FEATURES
* Fast switching Speed. * Surface Mount Package Ideally Suited For Automatic Insertion. * Silicon Epitaxal Planar Construction. * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above
.0
67
(1
.7
)
MECHANICAL DATA
Case: QUADRO-MELF, Model Glass Terminals: Solderable per MIL-STD-202E, Method 208 Polarity: Cathode Band Marking: Cathode Band Only Weight: 0.03 grams Packing information T/R - 2.5K per 7" plastic Reel
.020(0.5) .012(0.3) .146(3.7) .130(3.3)
.020(0.5) .012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25C unless otherwise noted)
P A R A M E TE R
R e ve rse V o l a g e t P e a k R e ve rse V o l a g e t R M S V olage t M a xi um A ve ra g e F o rw a rd C urre nt a t Ta = 2 5 O C A nd f > 5 0 H z m S urg e F o rw a rd C urre nt a t t < 1 s a nd T j 2 5 = P o w e r D i si a t o n a t Ta m b = 2 5 spi
O O
S YM B O L VR V RM V RM S IV A I SM F P TO T VF
LS 4148
75 100 50 150 500 500 1. 0 25 5 50 4 4 350 -6 5 t + 1 7 5 o
.063(1.6) .055(1.4)DIA.
UNI S T
V V V mA mA mW V nA A A pF ns
O
C
C
M a xi um F o rw a rd V o l a g e a t I = 1 0 m A m t F M a xi um L e a ka g e C urre nt m at V R =20V at V R =75V a t V R = 2 0 V , J= 1 5 0 O C T M a xi um C a p a ci a nce (N o t 1 ) m t e M a xi um R e ve rse R e co ve ry Ti e (N o t 2 ) m m e M a xi um T he rm a l R e si t nce m sa Junct o n Te m p e ra t re a nd S t ra g e Te m p e ra t re R a ng e i u o u
I R
CJ TR R R JA TJ, S T
C /W
O
C
NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100
STAD-JUL.30.2004
PAGE . 1
RATING AND CHARACTERISTIC CURVES
A
10
2
I
v=tp / T T=1/fp tp IFRM T t
IFRM 10
1
V=0 V=0.1 10
0
V=0.2 V=0.3
10 -5 10
-1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
S
tp
Fig.1 ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
10
4
10
3
FORWARD RESISTANCE, W
T J =25 C f=1KHz 10
3
O
FORWARD CURRENT, mA
10
2
10
1
10
2
10
0
10
1
10
-1
10 -2 10
0
10
-2
10
-1
10
0
10
1
10
2
0
1 FORWARD VOLTAGE, VOLTS
2
FORWARD CURRENT, mA
Fig.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT
Fig.3 FORWARD CHARACTERISTICS
POWER DISSIPATION, mW
1.1
500
T J =25 C f=1KHz
O
300
CAPACITANCE, pF
100 200
1.0
0.9
0.8
100
0.7
0
AMBIENT TEMPERATURE
0
2
4
6
8
1.0
REVERSE VOLTAGE, VOLTS
Fig.4 DERATING CURVE
Fig.5 TYPICAL JUNCTION CAPACITANCE
STAD-JUL.30.2004
PAGE . 2

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