 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET June 2009 FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET -20 V, -3.6 A, 60 m Features Max rDS(on) = 60 m at VGS = -4.5 V, ID = -3.6 A Max rDS(on) = 80 m at VGS = -2.5 V, ID = -3.0 A Max rDS(on) = 110 m at VGS = -1.8 V, ID = -2.0 A Max rDS(on) = 170 m at VGS = -1.5 V, ID = -1.0 A Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin HBM ESD protection level > 2.4 kV typical (Note 3) RoHS Compliant Free from halogenated compounds and antimony oxides Battery protection Battery management Load switch General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Applications Pin 1 S1 G1 D2 S1 1 Q1 6 D1 D1 D2 G1 D2 2 3 Q2 5 4 G2 S2 D1 MicroFET 2x2 G2 S2 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 1a) (Note 1b) TA = 25 C (Note 1a) Ratings -20 8 -3.6 -15 1.4 0.7 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA RJA RJA Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Dual Operation, Junction to Ambient Thermal Resistance for Dual Operation, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 69 151 C/W Package Marking and Ordering Information Device Marking 623 Device FDMA6023PZT Package MicroFET 2X2 Thin 1 Reel Size 7 '' Tape Width 8mm Quantity 3000 units www.fairchildsemi.com (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 A, VGS = 0 V ID = -250 A, referenced to 25 C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V -20 -12 -1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 A ID = -250 A, referenced to 25 C VGS = -4.5 V, ID = -3.6 A VGS = -2.5 V, ID = -3.0 A rDS(on) Drain to Source On Resistance VGS = -1.8 V, ID = -2.0 A VGS = -1.5 V, ID = -1.0 A VGS = -4.5 V, ID = -3.6 A, TJ = 125 C gFS Forward Transconductance VDD = -5 V, ID = -3.6 A -0.4 -0.5 -2.7 40 49 60 70 58 15 60 80 110 170 72 S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 665 115 100 885 155 150 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to -4.5 V VDD = -10 V, ID = -3.6 A VDD = -10 V, ID = -3.6 A, VGS = -4.5 V, RGEN = 6 13 11 75 47 12 1.4 5.2 23 20 120 75 17 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -1.1 A (Note 2) -0.7 33 15 -1.1 -1.2 53 27 A V ns nC IF = -3.6 A, di/dt = 100 A/s (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 2 www.fairchildsemi.com FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA= 86 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RJA = 173 C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RJA = 69 C/Wwhen mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation. (d) RJA = 151 C/W when mounted on a minimum pad of 2 oz copper. For dual operation. a) 86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c) 69oC/W when mounted on a 1in2 pad of 2 oz copper. d)151oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 3 www.fairchildsemi.com FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 15 VGS = -3.0V 12 VGS = -2.5V VGS = -1.8V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5V VGS = -2.0V 3.0 PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX -ID, DRAIN CURRENT (A) 2.5 VGS = -1.5V 9 6 3 PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX VGS = -1.5V 2.0 VGS = -1.8V VGS = -2.0V 1.5 1.0 VGS = -2.5V VGS = -3.0V VGS = -4.5V 0 0.0 0.5 0 3 6 9 12 15 -ID, DRAIN CURRENT(A) 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -3.6A VGS = -4.5V ID = -3.6A PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX 1.4 rDS(on), DRAIN TO 160 120 TJ = 125oC 1.2 1.0 0.8 0.6 -75 80 40 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 15 PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V -ID, DRAIN CURRENT (A) 12 VDS = -5V 1 TJ = 125oC 9 6 TJ = 125oC 0.1 TJ = 25oC 0.01 3 0 0.0 TJ = -55oC TJ = 25oC TJ = -55oC 0.5 1.0 1.5 2.0 2.5 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 4 www.fairchildsemi.com FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 4.5 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -3.6A 2000 1000 Ciss 3.0 VDD = -10V VDD = -15V CAPACITANCE (pF) VDD = -5V Coss 1.5 100 0.0 0 4 8 Qg, GATE CHARGE(nC) f = 1MHz VGS = 0V Crss 12 16 50 0.1 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 P(PK), PEAK TRANSIENT POWER (W) 20 10 -ID, DRAIN CURRENT (A) VGS = -4.5 V SINGLE PULSE RJA = 173 oC/W 1 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms 1s 10 s DC 10 TA = 25 oC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 173 C/W TA = 25 oC o 1 0.5 -4 10 10 -3 0.01 0.1 1 10 50 10 -2 10 -1 1 10 100 1000 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 9. Forward Bias Safe Operation Area 2 DUTY CYCLE-DESCENDING ORDER Figure 10. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 -4 10 10 -3 RJA = 173 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 11. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 5 www.fairchildsemi.com FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 6 www.fairchildsemi.com FDMA6023PZT Dual P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench(R) Auto-SPMTM F-PFSTM The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) Global Power ResourceSM Programmable Active DroopTM CorePLUSTM Green FPSTM QFET(R) CorePOWERTM TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM CTLTM GmaxTM TinyLogic(R) RapidConfigureTM Current Transfer LogicTM GTOTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 UHC(R) OPTOLOGIC(R) (R) FACT OPTOPLANAR(R) Ultra FRFETTM SuperSOTTM-8 (R) (R) FAST UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 www.fairchildsemi.com |
Price & Availability of FDMA6023PZT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |