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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE FS5VS-6 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 +0.3 -0 1 5 0.8 0.5 qwe wr 2.6 0.4 q VDSS ................................................................................ 300V rDS (ON) (MAX) ................................................................. 1.6 ID ............................................................................................ 5A q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 300 30 5 15 60 -55 ~ +150 -55 ~ +150 1.2 4.5 Unit V V A A W C C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 300 30 -- -- 2 -- -- 1.6 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 1.2 2.4 2.5 270 55 10 11 13 32 22 1.5 -- Max. -- -- 10 1 4 1.6 3.2 -- -- -- -- -- -- -- -- 2.0 2.08 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50 IS = 2A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 MAXIMUM SAFE OPERATING AREA 5 3 2 POWER DISSIPATION PD (W) 80 DRAIN CURRENT ID (A) 60 101 7 5 3 2 100 7 5 3 2 10-1 7 5 tw=10s 100s 1ms 10ms DC 40 20 TC = 25C Single Pulse 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 6V PD= 60W 5.5V CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 60W 7V 10 5 DRAIN CURRENT ID (A) 8 TC = 25C Pulse Test 6V DRAIN CURRENT ID (A) 4 6 3 TC = 25C Pulse Test 2 5V 4 5V 2 1 4.5V 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC = 25C Pulse Test ID = 10A TC = 25C Pulse Test 4 VGS = 10V 3 20V 32 24 8A 16 2 8 5A 3A 0 4 8 12 16 20 1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC = 25C 75C 125C DRAIN CURRENT ID (A) 8 6 3 2 100 7 5 3 2 10-1 -1 10 23 5 7 100 4 2 0 0 4 8 12 16 20 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 3 2 102 7 5 3 2 td(on) 101 7 5 3 2 100 10-1 23 5 7 100 23 5 7 101 tr Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 td(off) tf 3 2 102 7 5 3 2 Coss 101 Crss 7 5 Tch = 25C f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test Tch = 25C ID = 5A 16 VDS = 50V 100V 200V 8 16 TC = 125C 12 12 8 25C 75C 4 4 0 0 4 8 12 16 20 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10-1 7 5 3 2 0.1 1.0 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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