View APTGT300A170D3G_4773892.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT300A170D3G
Phase leg Trench + Field Stop IGBT Power Module
3
VCES = 1700V IC = 300A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Q1 4 5 Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 400 300 600 20 1470 600A@1650V Unit V
September, 2008 1-5 APTGT300A170D3G - Rev 1
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGT300A170D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 12 mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 3 2.5 6.4 400 Unit mA V V nA
5.2
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A RG = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A RG = 4.7 VGE = 15V Tj = 25C VBus = 900V Tj = 125C IC = 300A Tj = 25C RG = 4.7 Tj = 125C VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Typ 27 0.9 3.5 280 80 850 120 300 100 1000 200 71 105 64 94 1200 Max Unit nF C
ns
ns
mJ
A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRRM IF VF trr Qrr Err
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 750 1000
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 300A
IF = 300A VR = 900V
mJ
www.microsemi.com
2-5
APTGT300A170D3G - Rev 1
di/dt =3500A/s
490 76 124 35 70
ns C
September, 2008
300 1.8 1.9 385
2.2
V
APTGT300A170D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 3500 -40 -40 -40 3 3 Min Typ Max 0.085 0.13 150 125 125 5 5 350 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D3 Package outline (dimensions in mm)
1
A
DETAIL A
www.microsemi.com
3-5
APTGT300A170D3G - Rev 1
September, 2008
APTGT300A170D3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 600 500 400 IC (A)
TJ = 125C VGE=20V
600
TJ=25C
450
TJ=125C
IC (A)
300
300 200
VGE=13V VGE=15V
150
100
VGE=9V
0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4
0 0 1 2 3 VCE (V) 4 5
600 500
Transfert Characteristics
TJ=25C
Energy losses vs Collector Current 300 225
VCE = 900V VGE = 15V RG = 4.7 TJ = 125C Eon Eoff
400 300 200 100 0 5 6 7 8 VGE (V) Switching Energy Losses vs Gate Resistance 400
VCE = 900V VGE =15V IC = 300A TJ = 125C
Eon
TJ=125C
E (mJ)
IC (A)
150 75 0
TJ=125C
Err
9
10
11
0
100
200
300 IC (A)
400
500
600
Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200 100 0 0
VGE=15V TJ=125C RG=4.7
300 E (mJ)
200
Eoff
100
Err
0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35
400
800
1200
1600
2000
VCE (V)
0.09 Thermal Impedance (C/W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.00001
0.05 0.3 0.1 0.9 0.7 0.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APTGT300A170D3G - Rev 1
September, 2008
APTGT300A170D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20
ZVS VCE=900V D=50% RG=4.7 TJ=125C TC=75C
Forward Characteristic of diode 600 500 400 IF (A) 300 200
TJ=125C TJ=25C
15
ZCS
10
5
hard switching
100 0
TJ=125C
0 0 100 200 IC (A) 300 400
0
0.5
1
1.5 VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02
0.3 0.1 0.05 Single Pulse 0.9 0.7 0.5
Diode
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGT300A170D3G - Rev 1
September, 2008

▲Up To Search▲

Price & Availability of APTGT300A170D3G

	To Download APTGT300A170D3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .