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| LTO-DMS MBR4040 thru MBR4060 40 Amp HT Power Schottky Barrier Rectifier 40 Volts to 60 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150C * Storage Temperature: - 55 C to +175C * Per diode Thermal Resistance 2.2C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 6 grams (approx) LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 TO-3P Millimeter Dim Min.. A B C D E F G H J K L M N P Q R 4.70 2.79 1.50 1.00 2.00 3.00 0.400 21.8 15.9 5.45 20.2 4.00 3.00 6.80 4.44 1.72 Max 5.30 3.18 2.50 1.40 2.40 3.40 0.800 22.4 16.5 ---20.6 4.60 3.40 7.62 5.30 2.03 Min. 0.185 0.110 0.059 0.040 0.079 0.118 0.016 0.860 0.627 0.215 0.795 0.157 0.118 0.268 0.175 0.068 Max. 0.209 0.125 0.098 0.055 0.094 0.133 0.031 0.883 0.650 ---0.810 0.180 0.133 0.300 0.210 0.080 Inches Symbol Characteristics MBR4040 MBR4045 MBR4060 Unit VRRM VRM VR(RMS) VF IF(AV) IFSM dv/dt Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Forward Voltage Drop Per Element IF=40A @TJ=25C Average Forward Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load Voltage Rate Of Change (Rated VR) Maximum DC Reverse Current At Rated DC Blocking Voltage TJ=25C TJ=125C 40 40 28 0.70 45 45 31.5 60 60 42 0.80 V V V V A A V/us mA C/ W pF C C 40 300 10000 0.2 40 2.0 400 -55to+150 -55to+175 IR RthJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision: 1 2002/06/17 |
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