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| JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO:-120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2SB649 VCBO Collector-base voltage 2SB649A 2SB649 VCEO Collector-emitter voltage 2SB649A VEBO IC ICM PD Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25ae Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ae ae Open collector Open base -160 -5 -1.5 -3 1 W V A A Open emitter -180 -120 V CONDITIONS VALUE -180 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB649 IC=-10mA; RBE= 2SB649A 2SB649 IC=-1m A ;IE=0 2SB649A IE=-1mA ;IC=0 IC=-0.5A ;IB=-50mA IC=-150mA ; VCE=5V VCB=-160V; IE=0 2SB649 hFE-1 DC current gain 2SB649A hFE-2 fT COB DC current gain Transition frequency Collector output capacitance IC=-0.5A ; VCE=-5V IC=-150mA ; VCE=-5V f=1MHz ; VCB=-10V IC=-150mA ; VCE=-5V CONDITIONS 2SB649 2SB649A SYMBOL MIN -120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -160 -180 V -180 -5 -1.0 -1.5 -10 60 60 30 140 27 MHz pF 320 200 |I V V V A V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE ICBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current hFE Classifications hFE-1 2SB649 2SB649A B 60-120 60-120 C 100-200 100-200 D 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB649 2SB649A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A 4 |
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