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| 2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126C 8.00.2 2.00.2 4.140.1 3.20.2 FEATURES Power smplifier applications Power dissipation PCM : 1 W Tamb=25ae (c) Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJTstg: -55ae to +150 ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) * VBE * VCE=- 5V, IC = -500mA IC =- 500 mA, IB=- 50mA VCE=- 5V,IC=-150mA ,, VCE=-5V IC=- 150 mA VCB=-10 V , IE =0,f=1MHz 11.00.2 1 2 3 O2.80.1 O3.20.1 1.40.1 1.270.1 15.30.2 0.760.1 2.28 Typ. 4.550.1 0.50.1 1: Emitter 2: Collector 3: Base Dimensions in Millimeters unless Test otherwise specified(c) MIN -180 MAX UNIT V V V -10 -10 conditions Ic=-1mA IE=0 Ic=-10mA IB=0 IE=-1mA Ic=0 VCB=- 160 V, IE=0 VEB= -4V , IC =0 2SB649 2SB649A 2SB649 2SB649A -120 -160 -5 |I A |I A VCE= -5V, IC= -150 mA 60 60 30 320 200 -1 -1.5 140 27 V V MHz pF fT C ob * The 2SB649 and 2SB649A are grouped by h FE1 as follows. Rank 2SB649 2SB649A B 60 - 120 60 - 120 C 100 - 200 100 - 200 D 160 - 320 ---Any changing of specification will not be informed individual Page 1 of 2 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 2SB649/2SB649A Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) -3 ICmax Collector current IC (A) -1.0 Area of Safe Operation (-13.3 V, -1.5 A) 20 (-40 V, -0.5 A) -0.3 -0.1 DC Operation (TC = 25C) 10 -0.03 2SB649 -0.01 -1 (-120 V, -0.038 A) (-160 V, -0.02 A) 2SB649A 0 50 100 Case temperature TC (C) 150 -3 -10 -30 -100 -300 Collector to emitter voltage VCE (V) Typical Output Characteristics -1.0 .5 -5 Typical Transfer Characteristics -500 VCE = -5 V Collector current IC (mA) -100 Collector current IC (A) -0.8 Ta = 75C 0 IC = 10 IB -0.6 0 5. --4.5 .0 -4 .5 -3 0 -3. -2.5 -2.0 TC = 25C -0.4 -1.5 -1.0 -10 -0.2 -0.5 mA IB = 0 0 -30 -50 -10 -20 -40 Collector to emitter voltage VCE (V) -1 -0.2 -0.4 -0.6 -0.8 -1.0 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current VCE = -5V Ta = 75C 25C Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -0 -1 350 DC current transfer ratio hFE 350 250 200 150 100 50 -25C 25 -25 Ta -10 -100 Collector current IC (mA) =7 -25 25 -1,000 0 -1 -10 -100 -1,000 Collector current IC (mA) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2of 2 5C PC = 20 W |
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