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Datasheet File OCR Text: |
SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity. 2N7002A N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage 1 ) ) SYMBOL VDSS VDGR VGSS RATING 60 60 20 115 mA 800 200 150 -55 150 mW UNIT V V V Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range ID IDP PD Tj Tstg EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ) TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 TYP. MAX. 1 1 -1 UNIT V A A A SYMBOL BVDSS IDSS IGSSF IGSSR 2008. 4. 4 Revision No : 5 1/4 2N7002A ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 1) CHARACTERISTIC Gate Threshold Voltage Drain-Source ON Resistance SYMBOL Vth RDS(ON) VGS=5V, ID=50mA VGS=10V, ID=500mA Drain-Source ON Voltage On State Drain Current Forward Transconductance Note 1) Pulse Test : Pulse Width 300 VDS(ON) VGS=5V, ID=50mA ID(ON) gFS , Duty Cycle 2.0% VGS=10V, VDS= 2 VDS(ON) VDS=2VDS(ON), ID=200mA 500 80 0.09 2700 320 0.2 mA mS 0.6 5 1.0 V TEST CONDITION VDS=VGS, ID=250 A VGS=10V, ID=500mA MIN. 1 TYP. 2.1 1.8 MAX. 2.5 5 UNIT V DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time toff SYMBOL Ciss Crss Coss ton VDD=30V, RL=150 , ID=200mA, VGS=10V, RGEN=25 VDS=25V, VGS=0V, f=1MHz TEST CONDITION MIN. TYP. 20 4 11 MAX. 50 5 25 20 nS 20 pF UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS CHARACTERISTIC Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage SYMBOL IS ISM VSD TEST CONDITION VGS=0V, IS=115mA (Note1) MIN. TYP. 0.88 MAX. 115 800 1.5 UNIT mA mA V 2008. 4. 4 Revision No : 5 2/4 2N7002A 2008. 4. 4 Revision No : 5 3/4 2N7002A 2008. 4. 4 Revision No : 5 4/4 |
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