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SSF8421
GENERAL FEATURES
N-Channel
VDS = 20V,ID = 4.5A RDS(ON) < 40m @ VGS=2.5V RDS(ON) < 30m @ VGS=4.5V
P-Channel
Schematic diagram
VDS = -20V,ID = -3.5A RDS(ON) < 85m @ VGS=-2.5V RDS(ON) < 50m @ VGS=-4.5V
Marking and pin Assignment High Power and current handing capability Lead free product is acquired Surface Mount Package
TSSOP-8
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 8421 Device SSF8421 Device Package TSSOP-8 Reel Size O330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RJA N-Ch P-Ch 83 100 /W Symbol VDS VGS ID IDM PD TJ,TSTG N-Channel 20 12 4.5 30 1.0 -55 To 150 P-Channel -20 12 -3.5 -30 1.0 -55 To 150 Unit V V A A W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) Parameter OFF CHARACTERISTICS Symbol Condition Min Typ Max Unit
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 1 of 4
A Good-Ark Company
SSF8421
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250A VGS=0V ID=-250A VDS=20V,VGS=0V VDS=-20V,VGS=0V VGS=12V,VDS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 1 -1 100 100 V
Zero Gate Voltage Drain Current
IDSS
A
Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
IGSS
nA
VGS(th)
VDS=VGS,ID=250A VDS=VGS,ID=-250A VGS=4.5V, ID=4.5A
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
0.6 -0.6 23 40 30 60 20 10 30 50 40 85
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-3.5A VGS=2.5V, ID=3.9A VGS=-2.5V, ID=-2.7A
m
Forward Transconductance
gFS
VDS=10V,ID=4.5A VDS=-10V,ID=-3.5A
S
SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) N-Ch VDD=10 V,ID=1A VGEN=10V,RGEN=6 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VDD=-10V,ID=-1A VGEN=-10V,RGEN=6 P-Ch N-Ch P-Ch N-Ch N-Ch VDS=15V,ID=4.5A,VGS=4.5V P-Ch N-Ch P-Ch P-Ch VDS=-15V,ID=-4.5A,VGS=-3.5V N-Ch P-Ch 22 27 40 30 50 55 20 21 10 14 2.5 3.5 3.0 3.5 50 50 80 60 100 100 40 40 20 25 nS
Turn-on Rise Time
tr
nS
Turn-Off Delay Time
td(off)
nS
Turn-Off Fall Time
tf
nS
Total Gate Charge
Qg
nC
Gate-Source Charge
Qgs
nC
Gate-Drain Charge
Qgd
nC
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 2 of 4
A Good-Ark Company
SSF8421
DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.25A VGS=0V,IS=-1.25A N-Ch P-Ch 1.2 -1.2 V V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing.
N-Channel THERMAL CHARACTERISTICS
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 3 of 4
A Good-Ark Company
SSF8421
TSSOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES
1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 4 of 4
A Good-Ark Company

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