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4V Drive Pch MOSFET
RW1E015RP
Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Space saving, high power package. 3) Low voltage drive. (4V)
(1) (2) (3)
Dimensions (Unit : mm)
WEMT6
(6)
(5)
(4)
Applications Switching Inner circuit
(6)
Abbreviated symbol : UJ
(5)
(4)
Packaging specifications
Package Type Code Basic ordering unit (pieces) RW1E015RP
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
Taping T2R 8000
2
1
(1)
(2)
(3)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 When mounted on a ceramic board
1 ESD PROTECTION DIODE 2 BODY DIODE
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
1 1 2
Limits -30 20 1.5 6 -0.5 -6 0.7 150 -55 to +150
Unit V V A A A A W C C
Thermal resistance
Parameter Channel to ambient
When mounted on a ceramic board.
Symbol Rth(ch-a)
Limits 179
Unit C / W
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c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A
RW1E015RP
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state RDS (on) - resistance - Forward transfer admittance Yfs 1.2 Input capacitance - Ciss Output capacitance - Coss Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time - tr Turn-off delay time - td (off) Fall time tf - Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge Qgd -
Pulsed
Data Sheet
Typ. - - - - 115 170 190 - 230 40 33 12 8 40 13 3.2 1.2 0.7
Max. 10 - -1 -2.5 160 240 270 - - - - - - - - - - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID= -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -1.5A, VGS= -10V ID= -0.7A, VGS= -4.5V ID= -0.7A, VGS= -4V VDS= -10V, ID= -1.5A VDS= -10V VGS=0V f=1MHz VDD -15V ID= -0.7A VGS= -10V RL 21.4 RG=10 VDD -15V RL 10 ID= -1.5A RG=10 VGS= -5V
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -1.5A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A
RW1E015RP
Electrical characteristics curves
3 2.5 DRAIN CURRENT : -ID [A] 2 1.5 1 0.5 0 0 0.2 0.4 0.6 3 VGS= -10V DRAIN CURRENT : -ID [A] VGS= -10V VGS= -8.0V VGS= -4.5V VGS= -4.0V DRAIN CURRENT : -ID [A] 2.5 2 VGS= -3.0V 1.5 1 0.5 0 1 0 2 4 6 VGS= -2.8V VGS= -4.5V VGS= -4.0V 1 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 10 VDS= -10V Pulsed
Data Sheet
0.1
VGS= -3.0V Ta=25C Pulsed 0.8
0.01
Ta=25C Pulsed 8 10
0.001 0 1 2 3 4
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta=25C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
1000
1000
VGS= -10V Pulsed
1000
VGS= -4.5V Pulsed
100
VGS= -4.0V VGS= -4.5V VGS= -10V
100 Ta=125C Ta=75C Ta=25C Ta= -25C
100 Ta=125C Ta=75C Ta=25C Ta= -25C
10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10
10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10
10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
REVERSE DRAIN CURRENT : -Is [A]
VGS= -4.0V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
10
VDS= -10V Pulsed
10
VGS=0V Pulsed
1
100
Ta=125C Ta=75C Ta=25C Ta= -25C
1 Ta= -25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10
0.1 0.01
0.01 0.1 1 10 0 0.5 1 1.5
DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
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3/4
2009.06 - Rev.A
RW1E015RP
500 Ta=25C Pulsed SWITCHING TIME : t [ns] ID = -1.5A 1000 GATE-SOURCE VOLTAGE : -VGS [V] Ta=25C VDD = -15V VGS= -10V R G=10 Pulsed 10
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m]
400
td(off) 100 tf
8
300
6
td(on) 10
200
4 Ta=25C VDD = -15V ID = -1.5A R G=10 Pulsed 0 1 2 3 4 5 6 7
100
ID = -0.7A 1 0 5 10 15 0.01 0.1 1
2
tr 10
0
0
GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
1000 Ciss
CAPACITANCE : C [pF]
100
Coss
Ta=25C f=1MHz VGS=0V 10 0.01 0.1
Crss
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage
Measurement circuit
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS
10% 50% 10%
90%
50% 10% 90%
RG
VDD
VDS td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG(Const) RG
D.U.T. VDD
Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.A
Notice
Notes
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