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| Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSIST OR HSBD139 Tstg Tj PC PC VCBO VCEO VEBO IC IC IB APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Storage Temperature- - - - - Junction Temperature - - - - - - Collector Dissipation Collector Dissipation Tc=25- (c)ae TA=25- (c)ae Ta=25ae(c) -55~150ae 150ae 12.5W 1.25W 80V 80V 5V 3A 1.5A 0.5A 1D Emitter, E 2D Collector 3D Base B C Collector-Base Voltage - - - - - - - - - - Collector-Emitter Voltage - - - - - - - - - Emitter-Base Voltage- - - - - - Collector Current Pulse(c) Collector Current DC(c)Base Current- ELECTRICAL CHARACTERISTICS Characteristics Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain Ta=25ae(c) Typ Max 0.1 10 25 25 40 250 0.5 1.0 80 V V Unit |I |I A A Test Conditions VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=0.5A VCE=2V, IC=150mA Ic=500mA, IB=50mA Ic=0.5A, VCE=2V Ic=30mA,IB=0 Symbol ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(ON) VCEO(SUS) Min Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage hFE(3) Classification Cassification 6 40~100 10 63~160 16 100~250 hFE(3) Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSIST OR HSBD139 |
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