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HFC1N80
Jan 2007
BVDSS = 800 V
HFC1N80
800V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 13 ID = 0.6 A
TO-126
1
2
3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25 unless otherwise specified
Parameter
Value 800
Units V A A A V mJ A mJ V/ns W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
0.6 0.37 2.4 30
(Note 2) (Note 1) (Note 1) (Note 3)
90 0.6 1.39 4.0 13.9 0.11 -55 to +150 300
Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 9.0 62.5 /W Units
SEMIHOW REV.A0,Jan 2007
HFC1N80
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 0.3 A 2.5 --13 4.5 16 V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------1.0 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---150 20 5.5 195 26 7.2
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 400 V, ID = 1.0 A, RG = 25
--------
12 40 25 45 7.5 1.2 4.5
30 90 60 100 10.0 ---
nC nC nC
VDS = 640 V, ID = 1.0 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 0.6 A, VGS = 0 V IS = 1.0 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------310 0.8 0.6 2.4 1.4 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=170mH, IAS=1.0A, VDD=50V, RG=25, Starting TJ =25C 3. ISD0.6A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Jan 2007
HFC1N80
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
40
RDS(on) , [] Drain-Source On-Resistance
30 25 20 15
VGS = 10V VGS = 20V
Note : TJ = 25
10 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-Drain Voltage [V]
ID , Drain Current [A]
IDR, Reverse Drain Current [A]
35
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
250
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
Ciss
200
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VGS, Gate-Source Voltage [V]
10
VDS = 160V VDS = 400V
Capacitances [pF]
8
150
VDS = 640V
6
100
Coss
Note ; 1. VGS = 0 V 2. f = 1 MHz
4
Crss
50
2
Notes : ID = 1.0 A
0 -1 10
0
10
0
10
1
0
1
2
3
4
5
6
7
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Jan 2007
HFC1N80
Typical Characteristics
(continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 0.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
0.6
Operation in This Area is Limited by R DS(on)
Figure 8. On-Resistance Variation vs Temperature
ID, Drain Current [A]
ID, Drain Current [A]
103
100
100 s 1 ms 10 ms
0.4
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
DC
0.2
10-2 0 10
101
102
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
101
D=0.5
ZJC(t), Thermal Response
0.2
100
0.1 0.05 0.02 0.01 single pulse
* Notes : 1. ZJC(t) = 0.56 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
PDM t1 t2
100 101
10-1 10-5 10-4 10-3 10-2 10-1
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Jan 2007
HFC1N80
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,Jan 2007
HFC1N80
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,Jan 2007
HFC1N80
Package Dimension
TO-126
8.5max
3.2
0.2
2.8max
3.80.2 12max
1.27typ
2.50.2
0.780.08 2.3max 2.3max 0.50.1
13max
1.20.2
SEMIHOW REV.A0,Jan 2007

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