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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY81 DESCRIPTION *Continuous Collector Current-IC= 4A *Collector Power Dissipation: PC= 36W @TC= 25 *Complement to Type BDY83 APPLICATIONS *Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEX VCEO VEBO IC IB B PARAMETER Collector-Base Voltage VALUE 60 UNIT V Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature w w scs .i w 60 50 10 4 2 36 150 -55~175 .cn mi e V V V A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; IB= 0 IC= 10mA; IE= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A B BDY81 MIN 50 60 10 TYP. MAX UNIT V V V 1.5 0.9 10 0.2 0.1 240 V V mA mA mA IC= 0.5A; VCE= 5V VCE= 20V; IB= 0 B Current Gain-Bandwidth Product w C ww scs .i VEB= 5V; IC= 0 VCB= 20V; IE= 0 IC= 0.5A; VCE= 5V .cn mi e 40 10 1 IC= 2.5A; VCE= 5V IC= 0.5A; VCE= 10V MHz hFE-1 Classifications A 40-80 B 70-140 120-240 isc Websitewww.iscsemi.cn 2 |
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